STMicroelectronics SiC-MOSFET:ar

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datablad
57På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 30 A 72 mOhms - 18 V, + 18 V 4.2 V 32 nC - 55 C + 200 C 210 W Enhancement


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Datablad
85På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 37 nC - 55 C + 175 C 223 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
Datablad
73På lager
1 200Förväntad 2026-03-16
Min.: 1
Multipla: 1
Papprulle: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 37 nC - 55 C + 175 C 223 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Datablad
592På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.7 kV 6 A 1 Ohms - 10 V, + 25 V 2.1 V 14 nC - 55 C + 200 C 120 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
Datablad
510På lager
Min.: 1
Multipla: 1

Through Hole N-Channel 1 Channel 1.2 kV 20 A 239 mOhms - 20 V, + 20 V 3.5 V 45 nC - 55 C + 200 C 175 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datablad
1 597På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 3 000

SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 40 A 18 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 175 C 935 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Datablad
593På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 36 A 100 mOhms - 10 V, + 22 V 4.9 V 61 nC - 55 C + 200 C 278 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
Datablad
317På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 100 A 69 mOhms - 10 V, + 22 V 5 V 162 nC - 55 C + 200 C 420 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
Datablad
90På lager
Min.: 1
Multipla: 1

Through Hole HiP247-4 N-Channel 1 Channel 1.2 kV 33 A 105 mOhms - 18 V, + 18 V 5 V 63 nC - 55 C + 200 C 290 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Datablad
9På lager
2 000Förväntad 2026-10-12
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
Datablad
151På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 119 A 24 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 200 C 565 W Enhancement


STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
Datablad
28På lager
Min.: 1
Multipla: 1

Through Hole HIP247-4 N-Channel 1 Channel 1.2 kV 91 A 30 mOhms - 10 V, + 22 V 2.45 V 150 nC - 55 C + 200 C 547 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
Datablad
600Förväntad 2026-10-26
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 129 A 15 mOhms - 18 V, + 18 V 4.2 V 167 nC - 55 C + 200 C 673 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Datablad
1 200På beställningen
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 56 A 37 mOhms - 18 V, + 18 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
Datablad
400Förväntad 2027-01-04
Min.: 1
Multipla: 1
Papprulle: 600



STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
Datablad
996Förväntad 2026-04-22
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datablad
1 113Förväntad 2026-03-18
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 4.2 V 29 nC - 55 C + 175 C 185 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
Datablad
844Förväntad 2026-11-23
Min.: 1
Multipla: 1

Through Hole N-Channel 1 Channel 1.2 kV 12 A 500 mOhms - 10 V, + 25 V 3.5 V 22 nC - 55 C + 200 C 150 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Datablad
100På beställningen
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
Datablad
100På beställningen
Min.: 1
Multipla: 1

Through Hole HiP247-4 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 10 V, + 22 V 3.1 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
Datablad
69Förväntad 2026-03-16
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 119 A 24 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 200 C 565 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
Datablad
Ledtid för icke lagerfört 16 Veckor
Min.: 1
Multipla: 1
Papprulle: 1 000

STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
Datablad
Ledtid för icke lagerfört 18 Veckor
Min.: 600
Multipla: 600
Papprulle: 600

STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
Datablad
Ledtid för icke lagerfört 19 Veckor
Min.: 1 800
Multipla: 1 800
Papprulle: 1 800

STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Datablad
Ledtid för icke lagerfört 16 Veckor
Min.: 1 000
Multipla: 1 000
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms -10 V, 22 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement