STMicroelectronics SiC-MOSFET:ar

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
Datablad
252På lager
600På beställningen
Min.: 1
Multipla: 1
Papprulle: 600

STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
Datablad
969På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT N-Channel 1 Channel 650 V 30 A 40 mOhms - 10 V, + 22 V 4.2 V 39.5 nC - 55 C + 175 C 221 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Datablad
2 329På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 3 000

SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 40 A 67 mOhms - 10 V, + 22 V 5 V 73 nC - 55 C + 175 C 417 W Enhancement
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
Datablad
714På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 91 A 21 mOhms - 10 V, + 22 V 4.9 V 150 nC - 55 C + 200 C 547 W Enhancement
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
Datablad
47På lager
600Förväntad 2026-04-20
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 90 A 25 mOhms - 10 V, + 22 V 1.9 V 157 nC - 55 C + 200 C 390 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
Datablad
922På lager
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Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 112 A 22 mOhms - 10 V, + 22 V 3 V 150 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
Datablad
274På lager
600Förväntad 2026-03-09
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 750 V 110 A 15 mOhms - 10 V, + 22 V 3.2 V 154 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
Datablad
640På lager
Min.: 1
Multipla: 1

Through Hole HiP247-3 N-Channel 1 Channel 900 V 110 A 15.8 mOhms - 10 V, + 22 V 3.1 V 138 nC - 55 C + 200 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
Datablad
739På lager
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Min.: 1
Multipla: 1
Papprulle: 600

SMD/SMT HU3PAK-7 N-Channel 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
Datablad
513På lager
Min.: 1
Multipla: 1

Through Hole Hip247-4 N-Channel 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C + 200 C 541 W Enhancement AEC-Q101

STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
Datablad
502På lager
Min.: 1
Multipla: 1

Through Hole HiP247-3 N-Channel 1 Channel 1.2 kV 56 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
Datablad
1 082På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
Datablad
1 011På lager
600Förväntad 2027-01-04
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SMD/SMT HU3PAK-7 N-Channel 1 Channel 1.2 kV 40 A 72 mOhms - 10 V, + 22 V 3 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Datablad
547På lager
Min.: 1
Multipla: 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Datablad
641På lager
Min.: 1
Multipla: 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
Datablad
1 779På lager
Min.: 1
Multipla: 1
Papprulle: 1 800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 3 V 31 nC - 55 C + 175 C 234 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
Datablad
14På lager
2 000Förväntad 2026-10-12
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
Datablad
37På lager
Min.: 1
Multipla: 1
Papprulle: 1 800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 35 A 63 mOhms - 10 V, + 22 V 3 V 42.5 nC - 55 C + 175 C 288 W Enhancement


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
Datablad
425På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 900 V 110 A 12 mOhms - 18 V, + 18 V 4.2 V 138 nC - 55 C + 175 C 625 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Datablad
202På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
Datablad
552På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 77 nC - 55 C + 200 C 398 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
Datablad
353På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 60 A 29 mOhms - 18 V, + 18 V 4.2 V 51 nC - 55 C + 200 C 313 W Enhancement


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
Datablad
698På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
Datablad
629På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datablad
483På lager
1 200Förväntad 2026-04-20
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 41 nC - 55 C + 200 C 236 W Enhancement AEC-Q101