STMicroelectronics M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V_CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

The STMicroelectronics M Series 1200V Trench Gate Field-Stop IGBTs are offered in a TO-247 package with a -55°C to +175°C operating junction temperature range.

Features

Low loss IGBT series for applications up to 20kHz
High robustness and reliability
- 1200V breakdown voltage
- 10µs min. short-circuit rating at 150°C starting T_J
- Extended max operating T_J of 175°C

Thin IGBT die for increased thermal resistance
Positive V_CE(sat) temperature coefficient, with tight parameter distribution, for design simplification and easy paralleling
Optimized diode for fast recovery (high level of softness, low EMI and turn-on losses)