Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
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600Förväntad 2026-11-16
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SiC MOSFETS
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
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969På lager
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SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics MOSFET:er N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
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2 681På lager
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MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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2 329På lager
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SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
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922På lager
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
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274På lager
600Förväntad 2026-03-09
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SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
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739På lager
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SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
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513På lager
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SiC MOSFETS SiC Through Hole Hip247-4 N-Channel

STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
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502På lager
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SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
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1 082På lager
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
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1 011På lager
600Förväntad 2027-01-04
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SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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547På lager
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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641På lager
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
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1 779På lager
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SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
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14På lager
2 000Förväntad 2026-10-12
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
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37På lager
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SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
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160På lager
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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202På lager
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
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532På lager
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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353På lager
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
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698På lager
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
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629På lager
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SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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483På lager
1 200Förväntad 2026-04-20
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
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142På lager
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SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
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57På lager
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel