M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Serie
Förpackning
STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
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STMicroelectronics IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
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STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
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STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Datablad
1 393Förväntad 2026-12-04
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Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Datablad
600Förväntad 2027-06-18
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STMicroelectronics IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Datablad
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Datablad
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