1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Serie
Förpackning
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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Multipla: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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Si TO-220FP-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 24 W - 55 C + 175 C STGF5H60DF Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGP5H60DF Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube


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STMicroelectronics IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
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Si Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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23På lager
1 200Förväntad 2026-10-07
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Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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1 800Förväntad 2026-10-07
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Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120DF2 Tube


STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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600På lager
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Multipla: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
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547På lager
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Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
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Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
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Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 83 W - 55 C + 175 C STGD5H60DF Reel, Cut Tape, MouseReel
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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3 115På beställningen
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Multipla: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube

STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Datablad
1 200På beställningen
Min.: 1
Multipla: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long
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493På lager
Min.: 1
Multipla: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
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Ledtid för icke lagerfört 20 Veckor
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Si TO-220-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 14 A 88 W - 55 C + 175 C STGP7H60DF Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Ledtid för icke lagerfört 22 Veckor
Min.: 1
Multipla: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120DF2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Datablad
Ledtid för icke lagerfört 22 Veckor
Min.: 600
Multipla: 600

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120F2 Tube
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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Ledtid för icke lagerfört 15 Veckor
Min.: 2 000
Multipla: 1 000
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Ledtid för icke lagerfört 22 Veckor
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Multipla: 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 180 W - 55 C + 175 C Tube