onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices
onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Features
- Fast switching
- Low power losses
- Low ON resistance
- Increased power density
- High operating temperatures
- Fast operating frequency
- High efficiency
- No reverse recovery current
- Reduced EMI
- Reduced system size and cost
- Increased reliability
- Compact solutions
- Low weight
- Excellent thermal performance
- Temperature-independent switching characteristics
- Compact chip size ensures low capacitance and gate charge
- Provides a unique ecosystem focused on WBG solutions:
- SiC diodes geared towards ruggedness
- SiC MOSFETs geared towards ruggedness and speed
- SiC drivers designed for WBG devices
- SPICE-based physical models for MOSFETs and diodes
Applications
- Solar boost converters and inverters
- Power factor correction
- Electric vehicle charging
- Uninterruptible power supplies (UPS)
- Server and telecom power supplies
Videos
Infographic
Wide Bandgap Technology Selector
onsemi 1700V EliteSiC (Silicon Carbide) Diodes
Provides superior switching performance and higher reliability compared to Silicon.
onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes
Provides superior switching performance and higher reliability to silicon-based devices.
onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes
Provides superior switching performance and higher reliability to silicon-based devices.
onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs
Provide superior switching performance and high reliability compared to silicon.
onsemi 900V EliteSiC (Silicon Carbide) MOSFETs
Provides superior switching performance and higher reliability compared to silicon.
onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs
1200V, 80mΩ, high-speed switching, AEC-Q101 automotive qualified, and come in TO247-3L package.
onsemi NCP51705 Gate Driver
Single 6A high-speed driver designed to drive low-side SiC MOSFET transistors.
onsemi NCP51820 High-Speed 650V GaN HB Driver
Designed to drive GaN power switches in off-line applications half-bridge topologies.
onsemi NXH100B120H3Q0 Dual Boost Power Modules
Features high efficiency and superior reliability.