1700V EliteSiC (Silicon Carbide) Diodes

onsemi 1700V EliteSiC (Silicon Carbide) Diodes use a technology that provides superior switching performance and higher reliability compared to Silicon. onsemi 1700V EliteSiC Diodes feature no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI and system size, and increased cost-effectiveness.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Konfiguration
If - Framström
Vrrm - Repetativ backspänning
Vf - Framspänning
Ifsm - Stötström framåt
Ir - Motström
Minsta drifttemperatur
Maximal drifttemperatur
Serie
Förpackning
onsemi SiC-schottkydioder SIC JBS 1700V 25A
Datablad
1 674På lager
Min.: 1
Multipla: 1

Through Hole TO-247-2 Single 25 A 1.7 kV 1.5 V 220 A 40 uA - 55 C + 175 C NDSH25170A Tube
onsemi SiC-schottkydioder Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1700 V, D1, TO-247-2L
Datablad
619På lager
Min.: 1
Multipla: 1

Through Hole Single 10 A 1.7 kV 1.5 V 105 A 40 uA - 55 C + 175 C NDSH10170A Tube