Nya RF JFET-transistorer
CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
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CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.2023-07-09
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Qorvo QPD2160D 1600 µm diskret GaAs pHEMTGer 32,5 dBm uteffekt vid P1 dB, 10,4 dB förstärkning och 63 % effektökning vid 1 dB.2022-04-19 -
Qorvo QPD2120D 1200 µm diskret GaAs pHEMTGer 31 dBm uteffekt vid P1 dB, 11,5 dB förstärkning och 57 % effektökning vid 1 dB.2022-04-19 -
Qorvo QPD2080D 800 µm diskret GaAs pHEMTGer 29,5 dBm uteffekt vid P1 dB, 11,5 dB förstärkning och 56 % effektökning vid 1 dB.2022-04-19 -
Qorvo QPD2060D 600 µm diskret GaAs pHEMTGer 28 dBm uteffekt vid P1 dB, 12 dB förstärkning och 55 % effektökning vid 1 dB.2022-04-19 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.2022-02-14 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.2022-02-14 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.2022-02-14