TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [RDS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Förpackning
Toshiba MOSFET:er N-ch MOSFET, 650 V, 0.095 O@10V, TOLL, DTMOS?
Datablad
1 800På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 29 A 95 mOhms 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Reel, Cut Tape
Toshiba MOSFET:er N-ch MOSFET, 650 V, 0.115 O@10V, TOLL, DTMOS?
Datablad
1 800På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 650 V 24 A 115 mOhms 30 V 4.5 V 42 nC + 150 C 190 W Enhancement Reel, Cut Tape
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.155 ohma.10V, TOLL, DTMOS?
Datablad
1 997På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 130 W Enhancement Reel, Cut Tape
Toshiba MOSFET:er 600V Silicon N-Channel MOS (DTMOS) MOSFET
Datablad
1 998På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 211 W Enhancement Reel, Cut Tape
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.099 O@10V, TOLL, DTMOS?
Datablad
2 000På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 4 V 36 nC + 150 C 176 W Enhancement Reel, Cut Tape
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.125 ohma.10V, TOLL, DTMOS?
Datablad
2 000På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

Si SMD/SMT TOLL-9 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 150 W Enhancement Reel, Cut Tape
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.063 ohma.10V, TO-247, DTMOS?
Datablad
73På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 63 mOhms 30 V 4 V 56 nC + 150 C 242 W Enhancement Tube
Toshiba MOSFET:er TO247 650V 1.69A N-CH
Datablad
205På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 37 A 68 mOhms - 30 V, 30 V 4.5 V 68 nC - 55 C + 150 C 270 W Enhancement Tube
Toshiba MOSFET:er TO220 150V 2.2A N-CH
Datablad
381På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 120 A 4.9 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 175 C 300 W Enhancement Tube
Toshiba MOSFET:er TO220 150V 2.2A N-CH
Datablad
284På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 76 A 5 mOhms - 20 V, 20 V 4.5 V 96 nC - 55 C + 175 C 53 W Enhancement Tube
Toshiba MOSFET:er TO220 150V 1.4A N-CH
Datablad
350På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 84 A 7.2 mOhms - 20 V, 20 V 4.5 V 66 nC - 55 C + 175 C 230 W Enhancement Tube
Toshiba MOSFET:er TO220 150V 1.4A N-CH
Datablad
312På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 57 A 7.4 mOhms - 20 V, 20 V 4.5 V 66 nC - 55 C + 175 C 46 W Enhancement Tube
Toshiba MOSFET:er TO220 150V 1.1A N-CH
Datablad
306På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 52 A 9.6 mOhms - 20 V, 20 V 4.5 V 50 nC - 55 C + 175 C 200 W Enhancement Tube
Toshiba MOSFET:er TO220 150V 1.1A N-CH
Datablad
209På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 150 V 49 A 9.7 mOhms - 20 V, 20 V 4.5 V 50 nC - 55 C + 175 C 45 W Enhancement Tube
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.08 ohma.10V, TO-220SIS, DTMOS?
Datablad
16På lager
100Förväntad 2026-05-27
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 30 A 80 mOhms 30 V 4 V 43 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.099 O@10V, TO-247, DTMOS?
Datablad
30På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 99 mOhms 30 V 36 nC + 150 C 176 W Enhancement Tube
Toshiba MOSFET:er N-ch MOSFET, 650 V, 0.115 O@10V, TO-220SIS, DTMOS?
Datablad
50På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 650 V 24 A 115 mOhms 30 V 4.5 V 42 nC + 150 C 45 W Enhancement Tube
Toshiba MOSFET:er N-ch MOSFET, 650 V, 0.115 O@10V, TO-247, DTMOS?
Datablad
30På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 115 mOhms 30 V 4.5 V 42 nC + 150 C 190 W Enhancement Tube
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.125 ohma.10V, TO-220SIS, DTMOS?
Datablad
50På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 20 A 125 mOhms 30 V 4 V 28 nC + 150 C 40 W Enhancement Tube
Toshiba MOSFET:er N-ch MOSFET, 600 V, 0.155 ohma.10V, TO-220SIS, DTMOS?
Datablad
3På lager
150Förväntad 2026-06-15
Min.: 1
Multipla: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 600 V 17 A 155 mOhms 30 V 4 V 24 nC + 150 C 40 W Enhancement Tube