AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 26A N-CH SIC
Datablad
495På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 26A N-CH SIC
Datablad
584På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 34A N-CH SIC
Datablad
758På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 26A N-CH SIC
Datablad
830På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 31A N-CH SIC
Datablad
51På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 118A 427W SIC 17mOhm TO-247N
Datablad
Produktkommenterarer
360På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 56A N-CH SIC
Datablad
814På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 34A N-CH SIC
Datablad
810På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 650V 70A 262W SIC 30mOhm TO-247N
Datablad
Produktkommenterarer
376På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 43A N-CH SIC
Datablad
115På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V 95A 427W SIC 22mOhm TO-247N
Datablad
Produktkommenterarer
199På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 31A 165W SIC 80mOhm TO-247N
Datablad
Produktkommenterarer
393På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 24A 134W SIC 105mOhm TO-247N
Datablad
Produktkommenterarer
1 629På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 55A 262W SIC 40mOhm TO-247N
Datablad
Produktkommenterarer
477På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 17A 103W SIC 160mOhm TO-247N
Datablad
Produktkommenterarer
506På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 1200V 72A 339W SIC 30mOhm TO-247N
Datablad
Produktkommenterarer
352På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 30A 134W SIC 80mOhm TO-247N
Datablad
Produktkommenterarer
376På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 39A 165W SIC 60mOhm TO-247N
Datablad
Produktkommenterarer
428På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 56A N-CH SIC
Datablad
787På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 51A N-CH SIC
Datablad
2 020På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 51A N-CH SIC
Datablad
947På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 43A N-CH SIC
Datablad
493På lager
Min.: 1
Multipla: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 43A N-CH SIC
Datablad
199På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 43A N-CH SIC
Datablad
686På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 750V 31A N-CH SIC
Datablad
1 996På lager
Min.: 1
Multipla: 1
Max.: 100
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement