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Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes

Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes (SBDs) are the 2nd generation Silicon Carbide (SiC) SBDs with the improved Junction Barrier-controlled Schottky-structure (JBS) chip design. These devices feature high surge current capabilities and low-loss characteristics with non-repetitive peak forward surge current ratings. The Toshiba TRSxxN65FB diodes use the TO-247 package and offer four (12A, 16A, 20A, and 24A) forward DC ratings (both legs) supporting increased equipment power. The thin wafer technology ensures low forward voltages and low switching losses. Typical applications include Power-Factor Correction (PFC), solar inverters, servers, Uninterruptible Power Supplies (UPS), communication equipment, multi-function printers, DC-DC converters, and electric vehicle power supply facilities.

Features

  • 2nd generation SiC SBDs with the improved Junction Barrier-controlled Schottky-structure (JBS) chip design
  • 650V repetitive peak reverse voltage (VRRM)
  • High surge current capabilities and low-loss characteristics
  • Through-hole, 3-pin TO-247 package (15.94mm × 20.95mm × 5.02mm)
  • High non-repetitive peak forward surge current ratings
    • IFSM (per leg) / (both legs)=52A / 104A (TRS12N65FB)
    • IFSM (per leg) / (both legs)=65A / 130A (TRS16N65FB)
    • IFSM (per leg) / (both legs)=79A / 158A (TRS20N65FB)
    • IFSM (per leg) / (both legs)=92A / 184A (TRS24N65FB)
  • Low junction capacitance (typical)
    • Cj (per leg) = 23pF (TRS12N65FB)
    • Cj (per leg) = 30pF (TRS16N65FB)
    • Cj (per leg) = 38pF (TRS20N65FB)
    • Cj (per leg) = 46pF (TRS24N65FB)
  • Low forward voltage 
    • VF (per leg)=1.45V (typical) @IF=6A (TRS12N65FB)
    • VF (per leg)=1.45V (typical) @IF=8A (TRS16N65FB)
    • VF (per leg)=1.45V (typical) @IF=10A (TRS20N65FB)
    • VF (per leg)=1.45V (typical) @IF=12A (TRS24N65FB)
  • Low reverse current (typical)
    • IR (per leg) = 0.3µA (TRS12N65FB)
    • IR (per leg) = 0.4µA (TRS16N65FB)
    • IR (per leg) = 0.5µA (TRS20N65FB)
    • IR (per leg) = 0.6µA (TRS24N65FB)

Applications

  • Power supplies for industrial equipment
    • Base stations
    • PC servers
    • Power supplying facilities for electric vehicles and laser beam machines
  • Power supplies for consumer equipment
    • Organic EL-TVs
    • Audio amplifiers
    • Projectors 
    • Multi-function printers

JBS Technology Illustration

Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes

Additional Resource

Related Product

Toshiba SiC Schottky Barrier Diodes

Features high reverse voltage ratings, and short reverse recovery time (trr).

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Artikelnummer Datablad Beskrivning
TRS16N65FB,S1Q TRS16N65FB,S1Q Datablad SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
TRS12N65FB,S1Q TRS12N65FB,S1Q Datablad SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A
TRS20N65FB,S1Q TRS20N65FB,S1Q Datablad SiC-schottkydioder RECT 650V 10A RDL SIC SKY
TRS24N65FB,S1Q TRS24N65FB,S1Q Datablad SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=24A
Publicerad: 2020-08-19 | Uppdaterad: 2024-11-20