TRSxxN65FB 650V SiC Schottky Barrier Diodes

Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes (SBDs) are the 2nd generation Silicon Carbide (SiC) SBDs with the improved Junction Barrier-controlled Schottky-structure (JBS) chip design. These devices feature high surge current capabilities and low-loss characteristics with non-repetitive peak forward surge current ratings. The Toshiba TRSxxN65FB diodes use the TO-247 package and offer four (12A, 16A, 20A, and 24A) forward DC ratings (both legs) supporting increased equipment power. The thin wafer technology ensures low forward voltages and low switching losses. Typical applications include Power-Factor Correction (PFC), solar inverters, servers, Uninterruptible Power Supplies (UPS), communication equipment, multi-function printers, DC-DC converters, and electric vehicle power supply facilities.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Konfiguration
If - Framström
Vrrm - Repetativ backspänning
Vf - Framspänning
Ifsm - Stötström framåt
Ir - Motström
Maximal drifttemperatur
Förpackning
Toshiba SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
Datablad
30På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 16 A 650 V 1.6 V 130 A 400 nA + 175 C Tube
Toshiba SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A
Datablad
11På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 12 A 650 V 1.6 V 104 A 300 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 10A RDL SIC SKY
Datablad
60På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 20 A 650 V 1.6 V 158 A 500 nA + 175 C Tube
Toshiba SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=24A
Datablad
6På lager
90Förväntad 2026-08-10
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 24 A 650 V 1.6 V 184 A 600 nA + 175 C Tube