SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

Resultat: 24
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Konfiguration If - Framström Vrrm - Repetativ backspänning Vf - Framspänning Ifsm - Stötström framåt Ir - Motström Minsta drifttemperatur Maximal drifttemperatur Förpackning
Toshiba SiC-schottkydioder RECT 650V 10A RDL SIC SKY 97På lager
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 10 A 650 V 1.45 V 79 A 500 nA + 175 C Tube
Toshiba SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A 30På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 16 A 650 V 1.6 V 130 A 400 nA + 175 C Tube
Toshiba SiC-schottkydioder V=650 IF=8A 7På lager
Min.: 1
Multipla: 1

Through Hole TO-220-2 Single 8 A 650 V 1.45 V 69 A 400 nA + 175 C Tube

Toshiba SiC-schottkydioder RECT 1.2KV 18A RDL SIC SKY 36På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Common Anode 36 A 1.2 kV 1.27 V 820 A 500 nA - 55 C + 175 C Tube
Toshiba SiC-schottkydioder RECT 1.2KV 61A RDL SIC SKY 114På lager
Min.: 1
Multipla: 1

Through Hole TO-247-2 Single 61 A 1.2 kV 1.27 V 1.08 kA 2 uA - 55 C + 175 C Tube
Toshiba SiC-schottkydioder SiC Schottky barrier diode;TO-247-2L; Vrrm=1200V; IF=40A; PD=454W 28På lager
30Förväntad 2026-05-01
Min.: 1
Multipla: 1

Through Hole TO-247-2L Single 102 A 1.2 kV 1.27 V 1.91 kA 3.6 uA + 175 C Tube
Toshiba SiC-schottkydioder RECT 1.2KV 38A RDL SIC SKY 56På lager
Min.: 1
Multipla: 1

Through Hole TO-247-2 Single 38 A 1.2 kV 1.27 V 690 A 1 uA - 55 C + 175 C Tube

Toshiba SiC-schottkydioder RECT 1.2KV 32A RDL SIC SKY 24På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Common Anode 64 A 1.2 kV 1.27 V 1.38 kA 1 uA - 55 C + 175 C Tube
Toshiba SiC-schottkydioder RECT 1.2KV 30A RDL SIC SKY 67På lager
Min.: 1
Multipla: 1

Through Hole TO-247-2L Single 83 A 1.2 kV 1.27 V 1.63 kA 2.8 uA + 175 C
Toshiba SiC-schottkydioder RECT 650V 12A RDL SIC SKY 20På lager
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 12 A 650 V 1.45 V 92 A 600 nA + 175 C Tube
Toshiba SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A 11På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 12 A 650 V 1.6 V 104 A 300 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 1.2KV 15A RDL SIC SKY 15På lager
Min.: 1
Multipla: 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.27 V 940 A 1.4 uA - 55 C + 175 C Tube

Toshiba SiC-schottkydioder RECT 1.2KV 25A RDL SIC SKY 15På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Common Anode 50 A 1.2 kV 1.27 V 1.06 kA 700 nA - 55 C + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 10A RDL SIC SKY 60På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 20 A 650 V 1.6 V 158 A 500 nA + 175 C Tube
Toshiba SiC-schottkydioder SCHOTTKY BARRIER DIODE TO-247 V=650 IF=24A 6På lager
90Förväntad 2026-08-10
Min.: 1
Multipla: 1

Through Hole TO-247-3 Dual Anode Common Cathode 24 A 650 V 1.6 V 184 A 600 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 2A RDL SIC SKY 8På lager
300Förväntad 2026-06-15
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 2 A 650 V 1.45 V 21 A 200 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 4A RDL SIC SKY 116På lager
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 4 A 650 V 1.45 V 37 A 200 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 6A RDL SIC SKY
200Förväntad 2026-07-17
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 6 A 650 V 1.45 V 52 A 300 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 10A RDL SIC SKY Ledtid för icke lagerfört 26 Veckor
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 10 A 650 V 1.45 V 83 A 500 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 12A RDL SIC SKY Ledtid för icke lagerfört 26 Veckor
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 12 A 650 V 1.45 V 97 A 600 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 3A RDL SIC SKY Ledtid för icke lagerfört 26 Veckor
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 3 A 650 V 1.45 V 27 A 200 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 4A RDL SIC SKY Ledtid för icke lagerfört 26 Veckor
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 4 A 650 V 1.45 V 39 A 200 nA + 175 C Tube
Toshiba SiC-schottkydioder V=650 IF=6A Ledtid 26 Veckor
Min.: 1
Multipla: 1

Through Hole TO-220-2 Single 6 A 650 V 1.45 V 55 A 300 nA + 175 C Tube
Toshiba SiC-schottkydioder RECT 650V 8A RDL SIC SKY Ledtid för icke lagerfört 26 Veckor
Min.: 1
Multipla: 1

Through Hole TO-220F-2L Single 8 A 650 V 1.45 V 65 A 400 nA + 175 C Tube