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STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology. The STMicroelectronics STP80N1K1K6 MOSFET offers top-notch on-resistance per area and gate charge. The device is ideal for high-power density and efficient applications.

Features

  • Worldwide best RDS(on) x area
  • Worldwide best FOM (figure of merit)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Flyback converters
  • Adapters for tablets, notebooks, and AIO
  • LED lighting

Application Circuit Diagram

Application Circuit Diagram - STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET

Associated MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs

800V, Zener-protected, 100% avalanche tested, and ideal for flyback converters and LED lighting.

Learn Moreom STMicroelectronics N-Channel MDmesh K6 Power MOSFETs View Productsrelaterat till STMicroelectronics N-Channel MDmesh K6 Power MOSFETs

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STMicroelectronics Standard Products

A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.

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Publicerad: 2024-06-11 | Uppdaterad: 2024-06-25