N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

Resultat: 12
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
STMicroelectronics MOSFET:er N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET 2 575På lager
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 12 A 340 mOhms - 10 V, 10 V 3 V 17.8 nC - 55 C + 150 C 92 W Enhancement Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET:er N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET 23På lager
1 000Förväntad 2026-02-17
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 16 A 220 mOhms - 30 V, 30 V 3.5 V 25.9 nC - 55 C + 150 C 27 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 1 003På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 5 A 1.1 Ohms - 30 V, 30 V 4 V 5.7 nC - 55 C + 150 C 21 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 1 047På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 7 A 600 mOhms - 30 V, 30 V 4 V 10.7 nC - 55 C + 150 C 23 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package 364På lager
2 500Förväntad 2026-08-17
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT N-Channel 1 Channel 800 V 16 A 220 Ohms - 30 V, 30 V 4 V 25.9 nC - 55 C + 150 C 105 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package 816På lager
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 10 A 450 mOhms - 30 V, 30 V 3 V 17.3 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 1 062På lager
Min.: 1
Multipla: 1

Si Tube
STMicroelectronics MOSFET:er N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 888På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 600 mOhms - 30 V, 30 V 4 V 10.7 nC - 55 C + 150 C 86 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET 229På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 450 mOhms Enhancement Tube


STMicroelectronics MOSFET:er N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package 75På lager
1 000Förväntad 2026-09-21
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 220 mOhms - 30 V, 30 V 4 V 25.9 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package Ledtid för icke lagerfört 13 Veckor
Min.: 1 000
Multipla: 1 000

Si Through Hole TO-220-3 1 Channel 800 V 12 A 340 mOhms - 30 V, 30 V 3.5 V - 55 C + 150 C 115 W Enhancement Tube
STMicroelectronics MOSFET:er N-channel 800 V, 750 mOhm typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package Ledtid för icke lagerfört 13 Veckor
Min.: 1 000
Multipla: 1 000

Si Through Hole TO-220-3 1 Channel 800 V 6 A 900 mOhms - 30 V, 30 V 3.5 V 7 nC - 55 C + 150 C 68 W Enhancement Tube