Nya SiC-MOSFET:ar
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.
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Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETsEngineered to meet the stringent demands of electric vehicle (EV) applications.2025-12-19
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onsemi NxT2023N065M3S EliteSiC MOSFETsFeature low effective output capacitance and ultra-low gate charge.2025-12-04 -
Central Semiconductor 1700 V N-kanals MOSFET:ar av kiselkarbid (SiC)These MOSFETS are designed for high-speed switching and fast reverse recovery applications.2025-11-20 -
ROHM Semiconductor 750V N-Channel SiC MOSFETsDevices boost switching frequency, decreasing the capacitors, reactors & other components required.2025-10-17 -
Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFETsOffers improved thermal performance, increased power density, and enhanced reliability.2025-10-09 -
Microchip Technology 1200V SIC MOSFETsMOSFETs offer high efficiency in a lighter, more compact solution with fast switching speeds.2025-09-25 -
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETsThese devices have a high blocking voltage with low on-state resistance [RDS(ON)].2025-09-19 -
IXYS IXSJxN120R1K 1200V SiC Power MOSFETsUp to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).2025-08-27 -
ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFETA 1700V drain-source voltage (VDSS) and 3.9A continuous drain current (ID) rated SiC MOSFET.2025-08-21 -
onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFETDelivers superior efficiency, fast switching, and robust thermal performance.2025-08-08 -
ROHM Semiconductor SCT40xKWA N-channel SiC power MOSFETsFeature 1200V VDS, low on-resistance, fast switching speed, and fast recovery time.2025-07-14 -
Littelfuse IXSJxN120R1 1 200 V SiC effekt-MOSFET:erHigh-performance devices designed for demanding power conversion applications.2025-06-23 -
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETsAutomotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.2025-06-03 -
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFETFeatures a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.2025-05-22 -
APC-E Silicon Carbide (SiC) MOSFETsDelivers high power, high frequency, and unmatched performance for demanding applications.2025-05-06 -
Wolfspeed 1700V Silicon Carbide MOSFETsOffers higher switching, system efficiency, and power density for next-generation power conversion.2025-04-17 -
IXYS IXSA80N120L2-7 SiC MOSFETSingle-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.2025-03-06 -
IXYS IXSA40N120L2-7 SiC MOSFETSingle-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.2025-03-06 -
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETsDeliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.2025-02-20 -
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETsDesigned for fast switching applications, offering reliable performance.2025-02-20 -
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFETOffers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications2025-02-18 -
IXYS IXSH40N120L2KHV SiC MOSFET1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.2025-02-18 -
IXYS IXSH80N120L2KHV SiC MOSFET1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.2025-02-18 -
SemiQ GEN3 1 200 V SiC MOSFET diskreta enheterDeveloped to increase performance and cut switching losses in high-voltage applications.2025-01-02 -
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETsIdeal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.2024-09-06