Microchip SiC-MOSFET:ar

Resultat: 119
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 15 mOhm TO-247-4 150På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 524 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-247-4 258På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 103 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 500 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 35 mOhm TO-268 98På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 65 A 44 mOhms - 10 V, + 23 V 1.9 V 99 nC - 55 C + 175 C 206 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 40 mOhm TO-268 44På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 64 A 50 mOhms - 10 V, + 23 V 1.8 V 137 nC - 55 C + 175 C 303 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-268 23På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 89 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 40 mOhm TO-247-4 67På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 66 A 40 mOhms - 10 V, + 23 V 2.6 V 137 nC - 55 C + 175 C 323 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch 115På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 24 mOhms - 10 V, 21 V 3 V 136 nC - 55 C + 175 C 416 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch 65På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 33 mOhms - 10 V, 21 V 5 V 109 nC - 55 C + 175 C 357 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch 115På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 40 mOhms - 10 V, 21 V 5 V 91 nC - 55 C + 175 C 310 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch 115På lager
Min.: 1
Multipla: 1

Thorugh Hole TO-247-4 N-Channel 1 Channel 1.2 kV 54 A 53 mOhms - 10 V, 21 V 5 V 69 nC - 55 C + 175 C 256 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch 120På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 60 mOhms - 10 V, 21 V 5 V 61 nC - 55 C + 175 C 237 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch 117På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 80 mOhms - 10 V, 21 V 5 V 45 nC - 55 C + 175 C 192 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch 81På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 30 A 107 mOhms - 10 V, + 21 V 5 V 34 nC - 55 C + 175 C 161 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 15 mOhm TO-247-4 Notch 310På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 5 V 215 nC - 55 C + 175 C 524 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 17 mOhm TO-247-4 Notch 20På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 119 A 22 mOhms - 10 V, + 23 V 5 V 194 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch 23På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 113 A 31 mOhms - 10 V, + 23 V 5 V 232 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 35 mOhm TO-247-4 Notch 79På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 75 A 44 mOhms - 10 V, + 23 V 5 V 93 nC - 55 C + 175 C 304 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch 58På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 71 A 50 mOhms - 10 V, + 23 V 5 V 137 nC - 55 C + 175 C 371 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 700 V 15 mOhm TO-268 91På lager
Min.: 1
Multipla: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 477 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 25 mOhm TO-247 142På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 113 A 31 mOhms - 10 V, + 23 V 1.9 V 232 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1700 V 35 mOhm TO-247 90På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 68 A 45 mOhms - 10 V, + 23 V 1.8 V 178 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 80 mOhm TO-247 238På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 37 A 100 mOhms - 10 V, + 23 V 1.8 V 64 nC - 55 C + 175 C 200 W Enhancement
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1700 V 750 mOhm TO-247-4 312På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1.7 kV 750 mOhms
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1200 V 17 mOhm TO-247-4 42På lager
Min.: 1
Multipla: 1

Screw Mount TO-247-4 N-Channel 1 Channel 1.2 kV 113 A 17.6 mOhms - 10 V, + 23 V 2.7 V - 55 C + 175 C 455 W
Microchip Technology SiC-MOSFET:ar MOSFET SIC 1700 V 35 mOhm TO-247-4 318På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 68 A 35 mOhms - 10 V, + 23 V 3.25 V 178 nC - 55 C + 175 C 370 W Enhancement