Advanced Linear Devices MOSFET:er

Resultat: 109
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
Advanced Linear Devices MOSFET:er Dual SAB MOSFET ARRAY VT=2.70V 3 684På lager
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Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.72 V - 40 C + 85 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Dual EPAD(R) N-Ch 45På lager
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Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 12 mA 500 Ohms, 500 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Depletion Tube
Advanced Linear Devices MOSFET:er Dual N-Ch EPAD FET Array VGS=0.0V 40På lager
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Si SMD/SMT SOIC-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFET:er Quad P-Channel EPAD Matched Pair 53På lager
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Si SMD/SMT SOIC-16 P-Channel 4 Channel 8 V 80 mA 1.14 kOhms - 8 V, 8 V 180 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Quad MOSFET ARRAY Vt=2.60V 18På lager
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Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.62 V 0 C + 70 C 500 mW Enhancement SAB Tube
Advanced Linear Devices MOSFET:er Dual SAB MOSFET ARRAY VT=2.20V 39På lager
200Förväntad 2026-04-09
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Multipla: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 300 Ohms - 12 V, 12 V 2.22 V - 40 C + 85 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er PREC N-CHAN EPAD CMOS MOSFET ARRAY 22På lager
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Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Enhancement Tube
Advanced Linear Devices MOSFET:er Dual MOSFET ARRAY Vt=2.50V 23På lager
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Multipla: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.52 V 0 C + 70 C 500 mW Enhancement SAB Tube
Advanced Linear Devices MOSFET:er Dual N-Ch EPAD FET Array VGS=0.0V 46På lager
Min.: 1
Multipla: 1

Si SMD/SMT SOIC-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 0 V 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFET:er Dual N-Ch Matched Pr VGS=0.0V 37På lager
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Multipla: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 180 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFET:er Quad N-Ch Matched Pr VGS=0.0V 29På lager
Min.: 1
Multipla: 1

Si Through Hole PDIP-16 N-Channel 4 Channel 10.6 V 80 mA 25 Ohms - 12 V, 12 V 820 mV 0 C + 70 C 500 mW Enhancement EPAD Tube

Advanced Linear Devices MOSFET:er Quad P-Channel EPAD Matched Pair 46På lager
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Multipla: 1

Si SMD/SMT SOIC-16 P-Channel 4 Channel 8 V 80 mA 1.1 kOhms - 8 V, 8 V 20 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Quad MOSFET ARRAY Vt=2.40V 154På lager
Min.: 1
Multipla: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.42 V 0 C + 70 C 500 mW Enhancement SAB Tube

Advanced Linear Devices MOSFET:er Dual N-Ch EPAD FET Array VGS=0.0V 16På lager
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Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 0 V 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFET:er Quad SAB MOSFET ARRAY VT=2.50V 1 548På lager
Min.: 1
Multipla: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.52 V - 40 C + 85 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Dual P&N-Ch. Pair 4På lager
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Multipla: 1

Si Through Hole PDIP-14 N-Channel, P-Channel 4 Channel 12 V 40 mA, 16 mA 50 Ohms, 180 Ohms - 12 V, 12 V 400 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Dual P&N-Ch. Pair 27På lager
150Förväntad 2026-02-25
Min.: 1
Multipla: 1

Si Through Hole PDIP-14 N-Channel, P-Channel 4 Channel 12 V 4.8 mA, 2 mA 350 Ohms, 1.2 kOhms - 12 V, 12 V 400 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Quad N-Channel Array 161På lager
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Si Through Hole PDIP-14 N-Channel 4 Channel 12 V 4.8 mA 350 Ohms - 12 V, 12 V 400 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Quad P-Channel Array 122På lager
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Si Through Hole PDIP-14 P-Channel 4 Channel 12 V 2 mA 1.2 kOhms - 12 V, 12 V 400 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Quad EPAD(R) N-Ch 20På lager
Min.: 1
Multipla: 1

Si Through Hole PDIP-16 N-Channel 4 Channel 10 V 12 mA 500 Ohms - 12 V, 12 V 0 V 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFET:er Dual EPAD(R) N-Ch 55På lager
Min.: 1
Multipla: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 12 mA 500 Ohms, 500 Ohms - 12 V, 12 V 0 V 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFET:er Dual N-Ch EPAD FET Array VGS=0.0V 36På lager
Min.: 1
Multipla: 1

Si Through Hole PDIP-8 N-Channel 2 Channel 10 V 79 mA 14 Ohms - 12 V, 12 V 20 mV 0 C + 70 C 500 mW Depletion Tube

Advanced Linear Devices MOSFET:er Quad MOSFET ARRAY Vt=2.50V 49På lager
Min.: 1
Multipla: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.52 V 0 C + 70 C 500 mW Enhancement SAB Tube

Advanced Linear Devices MOSFET:er Dual P&N-Ch. Pair 45På lager
Min.: 1
Multipla: 1

Si SMD/SMT SOIC-14 N-Channel, P-Channel 4 Channel 12 V 40 mA, 16 mA 50 Ohms, 180 Ohms - 12 V, 12 V 400 mV 0 C + 70 C 500 mW Enhancement Tube

Advanced Linear Devices MOSFET:er Quad SAB MOSFET ARRAY VT=2.20V 23På lager
Min.: 1
Multipla: 1

Si SMD/SMT SOIC-16 N-Channel 4 Channel 10.6 V 80 mA 400 Ohms - 12 V, 12 V 2.22 V 0 C + 70 C 500 mW Enhancement Tube