HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Resultat: 720
Välj Bild Artikelnummer
 Tillverk:
Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet.
Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
Förpackning
IXYS MOSFET:er 180 Amps 100V 6.1 Rds
Datablad
597På lager
700Förväntad 2026-08-17
Min.: 1
Multipla: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 180 A 6.4 mOhms - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFET:er 110 Amps 250V
Datablad
662På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 110 A 24 mOhms - 20 V, 20 V 3 V 157 nC - 55 C + 150 C 694 W Enhancement HiPerFET Tube

IXYS MOSFET:er 200 Amps 100V 5.4 Rds
Datablad
1 298På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 200 A 5.5 mOhms - 55 C + 175 C 550 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO247 650V 48A N-CH X2CLASS
Datablad
356På lager
Min.: 1
Multipla: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 65 mOhms - 30 V, 30 V 3 V 76 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube

IXYS MOSFET:er TRENCHT2 PWR MOSFET 40V 500A
Datablad
217På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 40 V 500 A 1.6 mOhms - 20 V, 20 V 3.5 V 405 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFET:er MOSFET Id180 BVdass100
Datablad
434På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 180 A 6.4 mOhms - 20 V, 20 V 2.5 V 151 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er 600V 10A
Datablad
179På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 10 A 740 mOhms - 30 V, 30 V 3 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFET:er 110Amps 150V
Datablad
2På lager
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 150 V 110 A 11 mOhms - 20 V, 20 V 2.5 V 150 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er 500V 12A
Datablad
300På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 12 A 500 mOhms - 30 V, 30 V 5.5 V 29 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFET:er 600V 14A
Datablad
306På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 14 A 550 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET:er 850V Ultra Junction X-Class Pwr MOSFET
Datablad
32På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFET:er MOSFET 650V/22A Ultra Junction X2
Datablad
41På lager
250Förväntad 2026-09-23
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO263 200V 36A N-CH X3CLASS
Datablad
86På lager
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 36 A 45 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube

IXYS MOSFET:er 250V/60A Ultra Junct ion X3-Class MOSFET
Datablad
222På lager
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 250 V 60 A 19 mOhms - 20 V, 20 V 2.5 V 50 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET:er POLAR HIPERFET WITH REDUCED RDS 1200V 6A
Datablad
83På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFET:er 7 Amps 1000V
Datablad
181På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 7 A 1.9 Ohms - 30 V, 30 V 6 V 47 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFET:er 250V/80A Ultra Junct ion X3-Class MOSFET
Datablad
171På lager
Min.: 1
Multipla: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 250 V 80 A 13 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFET:er 30 Amps 1200V 0.35 Rds
Datablad
12På lager
Min.: 1
Multipla: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1.2 kV 30 A 350 mOhms - 30 V, 30 V 6.5 V 310 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET:er TO247 300V 100A N-CH X3CLASS
Datablad
89På lager
300Förväntad 2026-04-03
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 100 A 13.5 mOhms - 20 V, 20 V 4.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube

IXYS MOSFET:er 10 Amps 800V 1.1 Rds
Datablad
290På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 10 A 1.1 Ohms - 30 V, 30 V 5.5 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFET:er 120 Amps 200V 0.022 Rds
Datablad
140På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 120 A 22 mOhms - 20 V, 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube

IXYS MOSFET:er 12 Amps 1200V 1.15 Rds
Datablad
50På lager
1 350Förväntad 2026-07-13
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 12 A 1.35 Ohms - 30 V, 30 V 6.5 V 103 nC - 55 C + 150 C 543 W Enhancement HiPerFET Tube

IXYS MOSFET:er PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datablad
145På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 12 A 900 mOhms - 30 V, 30 V 6.5 V 56 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFET:er 170 Amps 150V 0.013 Rds
Datablad
38På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 150 A 13 mOhms - 20 V, 20 V 5 V 190 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube

IXYS MOSFET:er Trench T2 HiperFET Power MOSFET
Datablad
200På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 160 A 9 mOhms - 20 V, 20 V 4.5 V 253 nC - 55 C + 175 C 880 W Enhancement HiPerFET Tube