AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

Resultat: 34
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering
ROHM Semiconductor SiC-MOSFET:ar TO263 1.2KV 24A N-CH SIC 1 201På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 24 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar TO263 1.2KV 24A N-CH SIC 1 488På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7LA N-Channel 1 Channel 1.2 kV 24 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO263 1.2KV 24A N-CH SIC 750På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 24 A 62 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 93 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 81A N-CH SIC 6På lager
450Förväntad 2026-06-18
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 23.4 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 750V 34A N-CH SIC 321På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar TO247 1.2KV 26A N-CH SIC 85På lager
450Förväntad 2026-06-18
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC-MOSFET:ar 1200V 40A 262W SIC 80mOhm TO-247N 117På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 A 80 mOhms - 6 V, + 22 V 1.6 V 106 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 21A 103W SIC 120mOhm TO-247N
450Förväntad 2026-07-23
Min.: 1
Multipla: 1
Through Hole TO-247-3 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC-MOSFET:ar 650V 93A 339W SIC 22mOhm TO-247N Ledtid för icke lagerfört 27 Veckor
Min.: 450
Multipla: 450

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement AEC-Q101