M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

Resultat: 46
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering Handelsnamn

onsemi SiC-MOSFET:ar SIC MOSFET 900V TO247-4L 20MOHM 2 252På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L 1 292På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar Silicon Carbide MOSFET, N-Channel - EliteSiC ,21mohm, 650V, M2, TO247-4L 428På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 650V 1 263På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L 569På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V 776På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L 430På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L 1 824På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L 3 923På lager
Min.: 1
Multipla: 1
Papprulle: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar 60MOHM 265På lager
Min.: 1
Multipla: 1
Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement AEC-Q101 EliteSiC
onsemi SiC-MOSFET:ar SIC MOS 20MOHM 900V 1 861På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 112 A 28 mOhms - 8 V, + 22 V 4.3 V 200 nC - 55 C + 175 C 477 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar 60MOHM 900V 1 230På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L 1 595På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOSFET 900V TO247-4L 60MOHM 314På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS 60MOHM 900V 1 276På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L 828På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOSFET 900V TO247-4L 20MOHM 450På lager
Min.: 1
Multipla: 1

TO-247-4 EliteSiC
onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L 428På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 242 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar 20MOHM 900V 348På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 503 W Enhancement AEC-Q101 EliteSiC
onsemi SiC-MOSFET:ar 60MOHM 1 003På lager
Min.: 1
Multipla: 1
Papprulle: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement AEC-Q101 EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V 440På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 5 V, + 18 V 4.3 V 50 nC - 55 C + 175 C 64 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-3L 400På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 12 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 650V 448På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 19 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 650V 445På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 44 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L 334På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC