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NTHL060N065SC1

Name: onsemi NTHL060N065SC1
Brand: onsemi
SKU: 863-NTHL060N065SC1
Price: 88.51 SEK
Availability: InStock

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Mouser nr:

863-NTHL060N065SC1

Tillverk: Nr.:

NTHL060N065SC1

Tillverk:

onsemi

Beskrivning:

SiC-MOSFET:ar Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L

Datablad:

NTHL060N065SC1 Datablad

ECAD-modell:

Ladda ned den kostnadsfria Libary Loader för att omvandla denna fil för ditt ECAD-verktyg. Läs mer om ECAD-modellen.

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På lager: 569

Lager:: 569 Kan skickas omedelbart

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Fabrikens ledtid:: 17 Veckor Uppskattad tillverkningstid i fabriken för kvantiteter som är större än vad som visas.

Ange kvantitet:

Minst: 1 Flera: 1

Enhetspris:

-,-- kr

Ext. pris:

-,-- kr

Est. Pris:

Prissättning (SEK)

Antal	Enhetspris	Ext. pris
	88,51 kr	88,51 kr
	59,95 kr	599,50 kr
	53,41 kr	5.341,00 kr

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Produktattribut	Attributvärde	Välj attribut
Tillverkare:	onsemi
Produktkategori:	SiC-MOSFET:ar
RoHS-direktivet:
REACH - SVHC:
Monteringsstil:	Through Hole
Paket/låda:	TO-247-3
Transistorns polaritet:	N-Channel
Antal kanaler:	1 Channel
Vds - Dräneringskällans genombrottsspänning:	650 V
Id - Kontinuerlig dräneringsström:	47 A
Rds på - Dräneringskällans resistans:	70 mOhms
Vgs - Gate-källans spänning:	- 8 V, + 22 V
Vgs th - Gate-källans tröskelspänning:	4.3 V
Qg - Gate-laddning:	74 nC
Minsta drifttemperatur:	- 55 C
Maximal drifttemperatur:	+ 175 C
Pd - Effektavledning:	176 W
Kanalläge:	Enhancement
Handelsnamn:	EliteSiC
Märke:	onsemi
Konfiguration:	Single
Falltid:	8 ns
Transkonduktans framåt - Min:	12 S
Förpackning:	Tube
Produkttyp:	SiC MOSFETS
Stigtid:	32 ns
Serie:	NTHL060N065SC1
Fabriksförpackningskvantitet:	450
Underkategori:	Transistors
Teknologi:	SiC
Typisk fördröjningstid vid avstängning:	23 ns
Typisk fördröjningstid vid påslagning:	12 ns

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Datablad

NTHL060N065SC1 Datablad

PCN

Product Change Notification (PDF)

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

NTHL060N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NTHL060N065SC1 Silicon Carbide (SiC) MOSFET provides superior switching performance and higher reliability. The MOSFET has low ON resistance and its compact chip size ensures low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.