M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Resultat: 27
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering Handelsnamn

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 160MOHM 1200V 2 549På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 40MOHM 1200V 1 014På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 40MOHM 1 1 511På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar 20MW 1200V 996På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC

onsemi SiC-MOSFET:ar SIC MOS 80MW 1200 V 80 mOhms 44A 1 182På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement AEC-Q101 EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 80MOHM 1200V 1 973På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement AEC-Q101 EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 20MOHM 1 257På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 160MOHM 1200V 2 060På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 1200V 16 2 176På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 80MOHM 1200V 686På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 80MOHM 1 1 326På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 40MOHM 1200V 221På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 1200V 160MOHM AUTO PART 181På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 80MOHM 1200V 689På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 80 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 20MOHM 1200V 282På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 1200V 40MOHM AUTO PART 224På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 20MOHM 1 234På lager
Min.: 1
Multipla: 1
Papprulle: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement AEC-Q101 EliteSiC
onsemi SiC-MOSFET:ar SIC 1700V MOS 28MO IN TO2 155På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.7 kV 71 A 40 mOhms - 15 V, + 25 V 4.3 V 222 nC - 55 C + 175 C 428 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC 1700V MOS 28MO IN TO2 118På lager
450Förväntad 2026-02-18
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 81 A 40 mOhms - 15 V, + 25 V 4.3 V 200 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS 20MW 1200V 1 471På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar 20MW 1200V 603På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 160MOHM 1200V 981På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 80MOHM 1 253På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 40MOHM 1 635På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 160MOHM 990På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC