Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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2 309På lager
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: 3 000

SiC MOSFETS SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
Datablad
7På lager
600Förväntad 2027-02-05
Min.: 1
Multipla: 1
: 600

SiC MOSFETS
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
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540På lager
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SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
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448På lager
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SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
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256På lager
600På beställningen
Min.: 1
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SiC MOSFETS Through Hole Hip247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
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250På lager
600Förväntad 2027-03-12
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP247-3 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
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599På lager
1 000På beställningen
Min.: 1
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: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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246På lager
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Datablad
487På lager
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
Datablad
481På lager
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
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1 404På lager
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: 1 800

SiC MOSFETS SMD/SMT TOLL-8 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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22På lager
1 000Förväntad 2027-01-29
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Min.: 1
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: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Datablad
13På lager
1 200På beställningen
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
Datablad
112På lager
600Förväntad 2026-09-07
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
Datablad
36På lager
600Förväntad 2027-05-07
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Datablad
35På lager
1 200Förväntad 2027-01-29
Min.: 1
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SiC MOSFETS Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
Datablad
730På lager
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: 1 000

SiC MOSFETS SMD/SMT N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
Datablad
334På lager
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SiC MOSFETS Through Hole N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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1 301På lager
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: 3 000

SiC MOSFETS SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics MOSFET:er N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x
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4 893På lager
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: 3 000

MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
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5På lager
1 200På beställningen
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: 600

SiC MOSFETS SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
Datablad
14På lager
1 800Förväntad 2027-01-29
Min.: 1
Multipla: 1
: 1 800

SiC MOSFETS SMD/SMT TOLL-8 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datablad
5På lager
600Förväntad 2027-04-16
Min.: 1
Multipla: 1

SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
Datablad
14På lager
Min.: 1
Multipla: 1
: 1 000

SiC MOSFETS SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Datablad
5På lager
600Förväntad 2027-02-12
Min.: 1
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SiC MOSFETS Through Hole HiP-247-3 N-Channel