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Antal RoHS ECAD-modell Teknologi
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Paket/låda
Transistorns polaritet
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Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
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Maximal drifttemperatur
Pd - Effektavledning
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Infineon Technologies MOSFET:er LOW POWER_LEGACY
Datablad
3 496På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 800V 6A TO220FP-3 CoolMOS C3
Datablad
2 241På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 780 mOhms - 20 V, 20 V 2.1 V 41 nC - 55 C + 150 C 39 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 8A TO220-3 CoolMOS C3
Datablad
833På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 560 mOhms - 20 V, 20 V 2.1 V 60 nC - 55 C + 150 C 104 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_LEGACY
Datablad
1 335På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4 A 1.1 Ohms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er N-Ch 850V 54.9A TO247-3
Datablad
284På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 54.9 A 77 mOhms - 20 V, 20 V 2.1 V 288 nC - 55 C + 150 C 500 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 8A TO220FP-3 CoolMOS C3
Datablad
471På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 560 mOhms - 20 V, 20 V 2.1 V 60 nC - 55 C + 150 C 40 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 17A D2PAK-2 CoolMOS C3
Datablad
863På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 2.1 V 117 nC - 55 C + 150 C 227 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er LOW POWER_LEGACY
Datablad
5 902På lager
35 000Förväntad 2027-07-22
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2 A 2.7 Ohms - 20 V, 20 V 2.1 V 12 nC - 55 C + 150 C 42 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er N-Ch 800V 11A TO247-3 CoolMOS C3
Datablad
255På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 800V 17A TO247-3 CoolMOS C3
Datablad
190På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 290 mOhms - 20 V, 20 V 2.1 V 88 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 6A TO220FP-3 CoolMOS C3
Datablad
387På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 780 mOhms - 20 V, 20 V 2.1 V 41 nC - 55 C + 150 C 39 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 8A TO220-3 CoolMOS C3
Datablad
116På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 650 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 104 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 17A D2PAK-2 CoolMOS C3
Datablad
983På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 290 mOhms - 20 V, 20 V 2.1 V 88 nC - 55 C + 150 C 227 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 800V 4A TO220-3 CoolMOS C3
Datablad
660På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.1 Ohms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 6A TO220-3 CoolMOS C3
Datablad
358På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 6A TO220-3 CoolMOS C3
Datablad
85På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 780 mOhms - 20 V, 20 V 2.1 V 41 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 800V 11A TO247-3 CoolMOS C3
Datablad
35På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 800V 17A TO247-3 CoolMOS C3
Datablad
284På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 2.1 V 117 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 11A TO220FP-3 CoolMOS C3
Datablad
855På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 11A TO220-3 CoolMOS C3
Datablad
202På lager
2 500På beställningen
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 17A TO220-3 CoolMOS C3
Datablad
282På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 290 mOhms - 20 V, 20 V 2.1 V 88 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 8A TO220FP-3 CoolMOS C3
Datablad
66På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 560 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 40 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 4A TO220-3 CoolMOS C3
Datablad
497Förväntad 2026-09-14
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.1 Ohms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 11A TO220FP-3 CoolMOS C3
Datablad
748Förväntad 2026-08-20
Min.: 1
Multipla: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 20 V, 20 V 2.1 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 800V 11A TO220-3 CoolMOS C3
Datablad
1 000På beställningen
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 20 V, 20 V 2.1 V 64 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube