650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Resultat: 29
Välj Bild Artikelnummer
 Tillverk:
Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet.
Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
onsemi SiC-MOSFET:ar SIC MOS TO247-3L 23MOHM 650V M3S
Datablad
3 466På lager
Min.: 1
Multipla: 1
Max.: 900

Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 18 mOhms - 8 V, + 22 V 4 V 262 nC - 55 C + 175 C 263 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 650V
Datablad
3 296På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V
Datablad
776På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 650V
Datablad
312På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 650V
Datablad
1 046På lager
Min.: 1
Multipla: 1
Max.: 20

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 650V
Datablad
1 282På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 650V
Datablad
1 782På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 650V
Datablad
509På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V
Datablad
1 589På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V
Datablad
400På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 650V
Datablad
418På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 242 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS TOLL 650V
Datablad
1 364På lager
Min.: 1
Multipla: 1
: 2 000

SMD/SMT PSOF-8 N-Channel 1 Channel 650 V 73 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 650V
Datablad
794På lager
Min.: 1
Multipla: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V
Datablad
202På lager
Min.: 1
Multipla: 1
Through Hole TO-247-4 N-Channel 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 32MOHM 650V M3S
Datablad
773På lager
Min.: 1
Multipla: 1
Max.: 20
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 10 V, + 22.6 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS TO247-4L 32MOHM 650V M3S
Datablad
604På lager
Min.: 1
Multipla: 1
Max.: 30

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 10 V, + 22.6 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS TO247-3L 32MOHM 650V M3S
Datablad
2 751På lager
Min.: 1
Multipla: 1
Max.: 510

Through Hole TO-247-3 N-Channel 1 Channel 650 V 51 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 23MOHM 650V M3S
Datablad
721På lager
Min.: 1
Multipla: 1
Max.: 10
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS D2PAK-7L 32MOHM 650V M3S
Datablad
800På lager
Min.: 1
Multipla: 1
Max.: 80
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS TO247-4L 23MOHM 650V M3S
Datablad
400På lager
Min.: 1
Multipla: 1
Max.: 45

Through Hole TO-247-4 N-Channel 1 Channel 650 V 67 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 245 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS TO247-4L 32MOHM 650V M3S
Datablad
396På lager
Min.: 1
Multipla: 1
Max.: 10

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS TO247-3L 23MOHM 650V M3S
Datablad
450På lager
Min.: 1
Multipla: 1
Max.: 45

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V
Datablad
422På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 8 V, + 22 V 4.3 V 50 nC - 55 C + 175 C 129 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-4L 650V
Datablad
449På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC-MOSFET:ar SIC MOS TO247-3L 650V
Datablad
618På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC