CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
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Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
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Pd - Effektavledning
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Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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1 500På beställningen
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SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 403 A 10.4 mOhms - 10 V, 25 V 5.1 V 348 nC - 55 C + 175 C 1.5 kW Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
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188På lager
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Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datablad
215På lager
Min.: 1
Multipla: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datablad
182På lager
Min.: 1
Multipla: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 250 W Enhancement
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Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datablad
586På lager
Min.: 1
Multipla: 1
: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datablad
1 798På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
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1 440På lager
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Multipla: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datablad
330På lager
750Förväntad 2026-10-15
Min.: 1
Multipla: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datablad
856På lager
Min.: 1
Multipla: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datablad
692På lager
Min.: 1
Multipla: 1
: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datablad
660På lager
Min.: 1
Multipla: 1
: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datablad
199På lager
750Förväntad 2026-11-19
Min.: 1
Multipla: 1
: 750

1.2 kV
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
Datablad
115På lager
240Förväntad 2026-09-17
Min.: 1
Multipla: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
Datablad
341På lager
Min.: 1
Multipla: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2
Datablad
352På lager
Min.: 1
Multipla: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
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Datablad
625På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 17 mohm G2
Datablad
589På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
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1 397På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 26 mohm G2
Datablad
451På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 34 mohm G2
Datablad
961På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1200V, 53 mohm G2
Datablad
697På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
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Datablad
933På lager
1 000Förväntad 2026-10-15
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: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datablad
3 135På lager
Min.: 1
Multipla: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
Datablad
6På lager
3 750På beställningen
Min.: 1
Multipla: 1
: 750

SMD/SMT PG-HDSOP-22 1.2 kV 257 A 7.5 mOhms 4.2 V + 175 C - 55 C 1.172 kW CoolSiC