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STMicroelectronics MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry

Applications

  • Switching applications
  • LC converters
  • Resonant converters

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STMicroelectronics Standard Products

A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.

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View Results ( 20 ) Page
Artikelnummer Datablad Id - Kontinuerlig dräneringsström Vgs - Gate-källans spänning Qg - Gate-laddning Pd - Effektavledning
STD5N60M2 STD5N60M2 Datablad 3.5 A - 25 V, 25 V 8.5 nC 45 W
STI28N60M2 STI28N60M2 Datablad 22 A - 25 V, 25 V 36 nC 170 W
STP18NM80 STP18NM80 Datablad 17 A - 30 V, 30 V 70 nC 190 W
STB28N60M2 STB28N60M2 Datablad 22 A - 25 V, 25 V 36 nC 170 W
STB40N60M2 STB40N60M2 Datablad 34 A - 25 V, 25 V 57 nC 250 W
STL13N60M6 STL13N60M6 Datablad 7 A - 25 V, 25 V 13 nC 52 W
STL10N60M6 STL10N60M6 Datablad 5.5 A - 25 V, 25 V 8.8 nC 48 W
STP8N80K5 STP8N80K5 Datablad 6 A - 30 V, 30 V 16.5 nC 110 W
STB33N60M2 STB33N60M2 Datablad 26 A - 25 V, 25 V 45.5 nC 190 W
STD7NM80 STD7NM80 Datablad 6.5 A - 30 V, 30 V 18 nC 90 W
Publicerad: 2012-07-24 | Uppdaterad: 2023-12-14