MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

Resultat: 20
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
STMicroelectronics MOSFET:er N-channel 800 V MDMesh 1 314På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 295 mOhms 30 V 5 V 70 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET:er N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET:er in D2PAK package 1 825På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 135 mOhms 25 V 2 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET:er in D2PAK package 1 854På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 150 mOhms 25 V 3 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package 934På lager
1 000Förväntad 2027-01-29
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 34 A 88 mOhms 25 V 3 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV 2 784På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 7 A 415 mOhms 25 V 3.25 V 13 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET:er N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 1 487På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21.5 A 135 mOhms 25 V 3 V 47 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET:er in D2PAK package 987På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 125 mOhms 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package 4 010På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.4 Ohms 25 V 3 V 8.5 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 4 880På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 4.8 A 860 mOhms 25 V 3 V 10 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 800 V MDMesh 639På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 295 mOhms 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-channel 800 V MDMesh 386På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 295 mOhms 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch, 800V-0.95ohms Mdmesh 6.5A 523På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms 30 V 4 V 18 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 800 V 0.25 17A Mdmesh 1På lager
2 000Förväntad 2027-06-18
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms 30 V 3 V 70 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package 77På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 30 A 95 mOhms 25 V 4 V 71 nC - 55 C + 150 C 57 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 1 140På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 5.5 A 660 mOhms 25 V 3.25 V 8.8 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET:er N-channel 600 V 0.27 ohm 13A MDmesh
2 000Förväntad 2027-05-28
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 260 mOhms 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 800 V 0.76 Ohm 6 A Zener-protected 400På lager
Min.: 1
Multipla: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 950 mOhms 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET:er N-Ch 800V 0.76 Ohm 6 A MDmesh K5 Ledtid för icke lagerfört 24 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 950 mOhms 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET:er N-CH 800V IPAK DPAK Mdmesh PWR MOSFET Ledtid för icke lagerfört 24 Veckor
Min.: 1 000
Multipla: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms 30 V 4 V 18 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET:er in I2PAK package Ledtid för icke lagerfört 24 Veckor
Min.: 1 000
Multipla: 1 000
Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 26 A 125 mOhms 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube