MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
STMicroelectronics MOSFET:er N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package
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2 361På lager
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 34 A 88 mOhms - 25 V, 25 V 3 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-Ch, 800V-0.95ohms Mdmesh 6.5A
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1 850På lager
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Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms - 30 V, 30 V 4 V 18 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET:er N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET:er in D2PAK package
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1 848På lager
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 135 mOhms - 25 V, 25 V 2 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 800 V MDMesh
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921På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
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6 550På lager
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Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.4 Ohms - 25 V, 25 V 3 V 8.5 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
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2 157På lager
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Papprulle: 3 000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 4.8 A 860 mOhms - 25 V, 25 V 3 V 10 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET:er in D2PAK package
Datablad
1 893På lager
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Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 150 mOhms - 25 V, 25 V 3 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
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2 800På lager
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 7 A 415 mOhms - 25 V, 25 V 3.25 V 13 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET:er N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6
Datablad
1 797På lager
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 5.5 A 660 mOhms - 25 V, 25 V 3.25 V 8.8 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET:er N-Ch 800V 0.76 Ohm 6 A MDmesh K5
Datablad
984På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET:er in D2PAK package
Datablad
1 387På lager
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Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 125 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 800 V 0.25 17A Mdmesh
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403På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8
Datablad
1 617På lager
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Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21.5 A 135 mOhms - 25 V, 25 V 3 V 47 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET:er N-channel 800 V MDMesh
Datablad
681På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 800 V MDMesh
Datablad
596På lager
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Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 5 V 70 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package
Datablad
137På lager
Min.: 1
Multipla: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 4 V 71 nC - 55 C + 150 C 57 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V 0.27 ohm 13A MDmesh
Datablad
915På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 260 mOhms - 25 V, 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-Ch 800 V 0.76 Ohm 6 A Zener-protected
Datablad
410På lager
Min.: 1
Multipla: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET:er N-CH 800V IPAK DPAK Mdmesh PWR MOSFET
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Ledtid för icke lagerfört 14 Veckor
Min.: 1 000
Multipla: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms - 30 V, 30 V 4 V 18 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET:er in I2PAK package
Datablad
Ledtid för icke lagerfört 14 Veckor
Min.: 1 000
Multipla: 1 000
Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 26 A 125 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube