ROHM Semiconductor SCT4018KR N-Channel SiC Power MOSFET
ROHM Semiconductor SCT4018KR N-Channel Silicon Carbide (SiC) Power MOSFET is a robust device optimized for high-efficiency power conversion in demanding applications. With a drain-source voltage rating of 1200V and a continuous drain current of 81A (at +25°C), the ROHM SCT4018KR delivers excellent performance in high-voltage environments. The device features a low typical on-resistance of 18mΩ and supports fast switching speeds, which significantly reduce switching losses and improve overall system efficiency. Housed in a TO-247-4L package, the SCT4018KR is well-suited for use in industrial power supplies, solar inverters, and motor drives. Leveraging the advantages of SiC technology, the SCT4018KR MOSFET offers superior thermal conductivity, high-temperature operation, and enhanced reliability, making it ideal for compact, high-performance power systems.
Features
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- TO-247-4L package
- Pb-free lead plating
- RoH compliant
Applications
- Solar inverters
- DC/DC converters
- Switch-mode power supplies
- Induction heating
Specifications
- 1200V maximum drain-source voltage
- Maximum continuous drain/source current
- 81A at +25°C
- 57A at +100°C
- 80μA maximum zero gate voltage drain current
- 179A maximum pulsed drain current
- Body diode
- Maximum forward current
- 81A pulsed
- 179A surge
- 3.3V typical forward voltage
- 12ns typical reverse recovery time
- 252nC reverse recovery charge
- 44A typical peak reverse recovery current
- Maximum forward current
- -4V to 21V maximum DC gate-source voltage range
- -4V to 23V maximum gate-source surge voltage range
- Maximum recommended gate-source drive voltage
- 15V to 18V maximum turn-on range
- 0V turn-off
- ±100nA gate-source leakage current
- 2.8V to 4.8V gate threshold voltage range
- Drain-source on-state resistance
- 23.4mΩ maximum static at +25°C
- 18mΩ typical
- 1Ω typical gate input resistance
- 0.48K/W junction-to-case thermal resistance
- 22S transconductance
- Typical capacitance
- 4532pF input
- 129pF output
- 9pF reverse transfer
- 156pF effective output, energy-related
- Typical gate
- 170nC total
- 32nC source charge
- 52nC drain charge
- Typical time
- 13ns turn-on delay
- 21ns rise
- 50ns turn-off delay
- 11ns fall
- Typical switching losses
- 520μJ turn-on
- 142μJ turn-off
- 4.0µs to 4.5µs typical short-circuit withstand time
- +175°C maximum virtual junction temperature
Inner Circuit
Related MOSFETs
ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs
Provides low on-resistances with improvements in the short-circuit withstand time.
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs
Can be used to boost switching frequency, reducing the size of the external components.
Publicerad: 2025-06-13
| Uppdaterad: 2025-06-19