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ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET

ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET is a compact, high-performance device designed for low-voltage switching applications. Housed in a space-saving TUMT3 package, the RV7E035AT offers excellent switching characteristics and low on-resistance, making it ideal for portable and battery-powered electronics. This MOSFET features a drain-source voltage (VDS) of -30V, a continuous drain current (ID) of -3.5A, and a low on-resistance [RDS(on)] of just 47mΩ at VGS = -4.5V, ensuring efficient power management and minimal heat generation. The ROHM Semiconductor RV7E035AT is optimized for high-speed switching and is well-suited for load switching, DC-DC converters, and power management circuits in compact electronic devices. A robust design and thermal efficiency also support reliable operation in demanding environments.

Features

  • Leadless ultra small and exposed drain pad for excellent thermal conduction, SMD plastic package (1.2mm × 1.2mm × 0.5mm)
  • Low 78mΩ maximum on-resistance
  • -4.5V drive
  • -30V maximum drain-source breakdown voltage
  • -24.1mV/°C typical breakdown voltage temperature coefficient
  • ±3.5A maximum continuous drain current
  • ±10A maximum pulsed drain current
  • ±20V maximum gate-source voltage
  • -3.5A maximum single pulse avalanche current
  • 0.46mJ maximum single pulse avalanche energy
  • 1.1W maximum power dissipation
  • -1µA maximum zero gate voltage drain current
  • ±100nA maximum gate-source leakage current
  • -1.0V to -2.5V gate threshold voltage range
  • 3.3mV/°C typical gate threshold voltage temperature coefficient
  • 13Ω typical gate resistance
  • 2.5S typical forward transfer admittance
  • Typical capacitance
    • 3.5pF input
    • 55pF output
    • 43pF reverse transfer
  • Typical times
    • 8.0ns turn-on delay
    • 9.0ns rise
    • 28ns turn-off delay
    • 8.5ns fall
  • Typical gate charge
    • 4.3nC total gate charge
    • 1.6nC gate-source charge
    • 1.5nC gate-drain charge
  • Body diode
    • -0.92A maximum continuous forward current
    • -10A maximum pulse forward current
    • -1.2V maximum forward voltage
  • -55°C to +150°C operating temperature range
  • Lead-free lead plating and RoHS compliant

Applications

  • Switching circuits
  • High side load switches

Inner Circuit

Application Circuit Diagram - ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET
Publicerad: 2025-05-20 | Uppdaterad: 2025-06-04