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ROHM Semiconductor RF6L025BG Power MOSFET

ROHM Semiconductor RF6L025BG Power MOSFET features 60V drain-source voltage (VDSS) and ±2.5A continuous drain current (ID). This N-channel MOSFET offers 91mΩ low on-resistance (RDS(on)) and power dissipation of 1W (PD). The RF6L025BG MOSFET operates within the -55°C to 150°C operating junction and storage temperature range and is available in a Halogen-free, small surface mount package (TUMT6 or SOT-363T). This RoHS-compliant device incorporates Pb-free plating. The RF6L025BG power MOSFET is suitable for switching, motor drives, and DC/DC converter applications.

Features

  • Low on - resistance
  • Pb-free plating and RoHS-compliant
  • Small surface mount package (TUMT6/SOT-363T)
  • Halogen-free

Specifications

  • 60V drain-source voltage (VDSS)
  • ±20V gate-source voltage (VGSS)
  • -55°C to 150°C operating junction and storage temperature range
  • 91mΩ RDS(on)(maximum) 
  • ±2.5A continuous drain current (ID)
  • 1W power dissipation (PD) 

Applications

  • Motor drives
  • Switching
  • DC/DC converters

Dimensions

Mechanical Drawing - ROHM Semiconductor RF6L025BG Power MOSFET
Publicerad: 2024-01-30 | Uppdaterad: 2024-02-02