Tillbaka till Infineon Technologies

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.

Available in robust automotive-qualified Q‑DPAK and PG‑TO263‑7 packages, these MOSFETs are AEC-Q101 compliant and support operation up to +175°C. Fast switching capability, low reverse recovery, and short-circuit withstand features ensure high efficiency and reliability in harsh automotive environments. By reducing cooling requirements and enabling compact system designs, CoolSiC™ MOSFETs help increase driving range and support scalable solutions for different power levels in traction and auxiliary systems.

Features

  • Highly robust 750V technology, 100% avalanche tested
  • Superior RDS(on) x Qfr
  • Excellent RDS(on) x Qoss and RDS(on) x QG
  • Unique combination of low Crss/Ciss and high VGS(th)
  • Infineon's proprietary die-attach technology
  • TSC package with material group I
  • Driver source pin available
  • Enhanced robustness and reliability for bus voltages beyond 500V
  • Single N-channel enhancement mode devices
  • Superior efficiency in hard switching
  • High switching frequency in soft switching topologies
  • Robustness against parasitic turn-on for unipolar gate driving
  • Excellent thermal dissipation
  • Reduced switching losses through improved gate control
  • AEC‑Q101 qualified
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • Uni‑ and bidirectional onboard chargers and HV‑LV DC-DC converters (hard switching half bridges and soft switching topologies)
  • Circuit breakers (HV battery disconnect switches, DC and AC low frequency switches, and HV E‑fuses)
  • Auxiliary drives

Specifications

  • 750V drain-source breakdown voltage
  • 9mΩ to 78mΩ drain-source on resistance range
  • 5.6V gate-source threshold voltage
  • -7V/+23V gate-source voltage
  • 29A to 198A continuous drain current range
  • 20nC to 169nC gate charge range
  • 116W to 651W power dissipation range
  • 8.3S to 78S minimum forward transconductance range
  • 7ns to 17ns typical turn-on delay time range
  • 5ns to 18ns rise time range
  • 15ns to 39ns typical turn-off delay time range
  • 5ns to 10ns fall time range
  • Q‑DPAK or PG‑TO263‑7 surface-mount packages
  • -55°C to +175°C operating temperature range

Related MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.

Learn Moreom Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs View Productsrelaterat till Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs

Helps EV makers create 11kW and 22kW bidirectional onboard chargers.

Learn Moreom Infineon Technologies CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs View Productsrelaterat till Infineon Technologies CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs

High level of SiC performance while meeting the highest quality standards in AC-DC, DC-DC, & DC-AC.

Learn Moreom Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs View Productsrelaterat till Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs
Publicerad: 2025-11-24 | Uppdaterad: 2025-12-19