Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET
Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET offers fast switching times in a SOT-26 (SOT-457) package. The MMFTP6312D MOSFET features a 20V maximum drain-source voltage, 0.70W to 0.96W maximum power dissipation range, and a 2.3A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, battery management, drivers, and logic-level converters.
Features
- Fast switching times
- Commercial/industrial-grade
- UL 94V-0 case material
- SOT-26 (SOT-457) package style
- Moisture Sensitivity Level (MSL) 1
- Lead-free, RoHS and REACH compliant
Applications
- Signal processing
- Battery management
- Drivers
- Logic level converters
Specifications
- 20V maximum drain-source voltage
- ±8V maximum gate-source voltage
- 0.70W to 0.96W maximum power dissipation range
- 2.3A maximum drain current
- 7.0A maximum peak drain current
- 1µA maximum drain-source leakage current
- ±100nA maximum gate-source leakage current
- 0.4V to 1.5V gate-source threshold voltage range
- 115mΩ to 155mΩ maximum drain-source on-state resistance range
- 467pF typical input capacitance
- 85pF typical output capacitance
- 38pf typical reverse transfer capacitance
- 8ns to 13ns typical turn-on time range
- 8ns to 18ns typical turn-off time range
- 4.4nC typical total gate charge
- 1.0nC typical gate-source charge
- 0.8nC typical gate-drain charge
- 1.2V maximum forward voltage
- Thermal resistance
- <130K/W junction-to-case
- <60K/W junction-to-ambient
- -55°C to +150°C junction temperature range
Additional Resources
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Publicerad: 2023-02-21
| Uppdaterad: 2023-02-24