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IXYS IXFH60N65X2-4 & IXFH80N65X2-4 X2-Class MOSFETs

IXYS IXFH60N65X2-4 and IXFH80N65X2-4 X2-Class Discrete MOSFETs offer low drain-source resistance (38mΩ or 52mΩ) and low gate charge in an avalanche-rated international standard package. The IXYS IXFH60N65X2-4 and IXFH80N65X2-4 X2-Class Discrete MOSFETs also feature low package inductance and a 650V drain-source breakdown voltage. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, and more.

Features

  • International standard package
  • Low drain-source resistance (RDS(ON)) and gate charge (QG)
  • Avalanche rated
  • Low package inductance

Applications

  • Switch-mode and resonant-mode power supplies
  • DC-DC converters
  • Power factor correction (PFC) circuits
  • AC and DC motor drives
  • Robotics and servo controls

Specifications

  • 650V drain-source breakdown voltage
  • Drain-source resistance (RDS(ON))
    • 38mΩ (IXFH80N65X2-4)
    • 52mΩ (IXFH60N65X2-4)
  • Continuous drain current
    • 60A (IXFH60N65X2-4)
    • 80A (IXFH80N65X2-4)

Datasheets

Schematic

Schematic - IXYS IXFH60N65X2-4 & IXFH80N65X2-4 X2-Class MOSFETs

Related MOSFETs

IXYS X2-Class Power MOSFETs with HiPerFET™

For high-efficiency, high speed power switching applications with low gate charge.

Learn Moreom IXYS X2-Class Power MOSFETs with HiPerFET™ View Productsrelaterat till IXYS X2-Class Power MOSFETs with HiPerFET™
Publicerad: 2022-01-13 | Uppdaterad: 2022-03-11