CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.

Resultat: 39
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn
Infineon Technologies SiC-MOSFET:ar CoolSiC Automotive Power Device 750 V G2 1 391På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 103 A 20 mOhms - 7 V to + 23 V 5.6 V 74 nC - 55 C + 175 C 394 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 750 V G2 1 071På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 222 A 8.5 mOhms - 7 V to + 23 V 5.6 V 171 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC Automotive Power Device 750 V G2 643På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 70 A 31 mOhms - 7 V to + 23 V 5.6 V 49 nC - 55 C + 175 C 272 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC Automotive Power Device 750 V G2 710På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 30 A 78 mOhms - 7 V to + 23 V 5.6 V 20 nC - 55 C + 175 C 128 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 731På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 28 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC + 175 C 124 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 750 V G2 754På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 103 A 20 mOhms - 7 V to + 23 V 5.6 V 74 nC - 55 C + 175 C 394 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 725På lager
Min.: 1
Multipla: 1
Papprulle: 1 800

SMD/SMT HDSOP-16 N-Channel 1 Channel 650 V 34.7 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 187 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 800På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

TOLL-8 650 V 75 mOhms
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 737På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT LHSOF-4 N-Channel 1 Channel 650 V 30 A 95 mOhms 5.6 V 14.9 nC - 55 C + 175 C 141 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 750 V G2 162På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 70 A 31 mOhms - 7 V to + 23 V 5.6 V 49 nC - 55 C + 175 C 272 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 750 V G2 171På lager
Min.: 1
Multipla: 1
Papprulle: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 30 A 78 mOhms - 7 V to + 23 V 5.6 V 20 nC - 55 C + 175 C 128 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 86På lager
240Förväntad 2026-07-09
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 218På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 5 088På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 511På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 925På lager
1 000Förväntad 2026-10-29
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 238 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 789 W Enhancement
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 1 178På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 210 A 8.5 mOhms - 18 V, + 18 V 5.6 V 439 nC - 55 C + 175 C 625 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 222På lager
240På beställningen
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 83 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 273 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 394På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 1 063På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 103 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 361På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 054På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1 189På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3 648På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 136På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 115 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 416 W Enhancement CoolSiC