CoolSiC™ 1400V SiC G2 MOSFETs

Infineon Technologies CoolSiC™ 1400V Silicon Carbide (SiC) G2 MOSFETs are offered in a TO-247PLUS-4 reflow package. These Infineon MOSFETs are ideal for high-output power applications such as Electric Vehicle (EV) charging, Battery Energy Storage Systems (BESS), Commercial / Construction / Agricultural Vehicles (CAV), and more. The CoolSiC™ MOSFET G2 1400V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package features reflow capability (3x reflow soldering possible), enabling lower thermal resistance.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Infineon Technologies SiC-MOSFET:ar SIC DISCRETE
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Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
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Infineon Technologies SiC-MOSFET:ar SIC DISCRETE
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240På lager
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Multipla: 1

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Infineon Technologies SiC-MOSFET:ar CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
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Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 92 A 53.8 mOhms - 10 V, + 23 V 4.2 V 78 nC - 55 C + 175 C 380 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datablad
238På lager
Min.: 1
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Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 74 A 67.6 Ohms - 10 V, + 25 V 5.1 V 62 nC - 55 C + 175 C 330 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datablad
224På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 65 A 35 mOhms - 10 V, + 25 V 4.2 V 54 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology
Datablad
266På lager
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Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 52 A 38 mOhms - 10 V, + 25 V 5.1 V 41 nC - 55 C + 175 C 242 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package
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575På beställningen
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Infineon Technologies SiC-MOSFET:ar SIC DISCRETE
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240Förväntad 2026-04-16
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Infineon Technologies SiC-MOSFET:ar CoolSiC 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET
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Papprulle: 240

CoolSiC