STMicroelectronics SiC-MOSFET:ar

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
Datablad
714På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 91 A 21 mOhms - 10 V, + 22 V 4.9 V 150 nC - 55 C + 200 C 547 W Enhancement
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
Datablad
47På lager
600Förväntad 2026-04-20
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 90 A 25 mOhms - 10 V, + 22 V 1.9 V 157 nC - 55 C + 200 C 390 W Enhancement
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
Datablad
592På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.7 kV 6 A 1 Ohms - 10 V, + 25 V 2.1 V 14 nC - 55 C + 200 C 120 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
Datablad
510På lager
Min.: 1
Multipla: 1

Through Hole N-Channel 1 Channel 1.2 kV 20 A 239 mOhms - 20 V, + 20 V 3.5 V 45 nC - 55 C + 200 C 175 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
Datablad
593På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 1.2 kV 36 A 100 mOhms - 10 V, + 22 V 4.9 V 61 nC - 55 C + 200 C 278 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
Datablad
317På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 100 A 69 mOhms - 10 V, + 22 V 5 V 162 nC - 55 C + 200 C 420 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
Datablad
151På lager
Min.: 1
Multipla: 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 119 A 24 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 200 C 565 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
Datablad
844Förväntad 2026-11-23
Min.: 1
Multipla: 1

Through Hole N-Channel 1 Channel 1.2 kV 12 A 500 mOhms - 10 V, + 25 V 3.5 V 22 nC - 55 C + 200 C 150 W Enhancement AEC-Q101
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
Datablad
69Förväntad 2026-03-16
Min.: 1
Multipla: 1

Through Hole HiP-247-3 N-Channel 1 Channel 650 V 119 A 24 mOhms - 10 V, + 22 V 5 V 157 nC - 55 C + 200 C 565 W Enhancement
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
Datablad
Ledtid för icke lagerfört 17 Veckor
Min.: 600
Multipla: 600

Through Hole HiP247-3 N-Channel 1 Channel 650 V 55 A 27 mOhms -10 V, 22 V 4.2 V 76 nC - 55 C + 200 C 398 W Enhancement
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
Datablad
Ej på lager
Min.: 600
Multipla: 600

Through Hole HiP247-3 N-Channel 1 Channel 1.2 kV 40 A 54 mOhms -10 V, 22 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement