HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Resultat: 720
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering Handelsnamn Förpackning

IXYS MOSFET:er 74 Amps 200V 0.034 Rds
600Förväntad 2026-06-29
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 74 A 34 mOhms - 20 V, 20 V 5 V 107 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFET:er 96 Amps 200V 0.024 Rds
300Förväntad 2026-08-24
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO264 300V 150A N-CH X3CLASS
300Förväntad 2026-04-03
Min.: 1
Multipla: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 8.3 mOhms - 20 V, 20 V 4.5 V 254 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET:er GigaMOS Trench T2 HiperFET Pwr MOSFET
298Förväntad 2026-03-25
Min.: 1
Multipla: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 170 V 220 A 6.3 mOhms - 20 V, 20 V 5 V 500 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET:er GigaMOS Trench T2 HiperFET PWR MOSFET
258Förväntad 2026-03-13
Min.: 1
Multipla: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 240 A 5.2 mOhms - 20 V, 20 V 2.5 V 460 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET:er GigaMOS Trench T2 HiperFET PWR MOSFET
300Förväntad 2026-04-15
Min.: 1
Multipla: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 360 A 4 mOhms - 20 V, 20 V 2.5 V 715 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube
IXYS MOSFET:er PolarP2 Power MOSFET
300Förväntad 2026-05-12
Min.: 1
Multipla: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET:er POLAR HIPERFET WITH REDUCED RDS 1200V 6A
650Förväntad 2026-06-22
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFET:er 360Amps 55V
690På beställningen
Min.: 1
Multipla: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 55 V 360 A 2.4 mOhms - 20 V, 20 V 2 V 330 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFET:er Trench T2 HiperFET Power MOSFET
300Förväntad 2026-04-01
Min.: 1
Multipla: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 100 V 130 A 9.1 mOhms - 20 V, 20 V 4.5 V 130 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFET:er 3 Amps 1200V 4.5 Rds
80Förväntad 2026-03-03
Min.: 1
Multipla: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube

IXYS MOSFET:er DIODE Id14 BVdass800
240Förväntad 2026-04-10
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 14 A 720 mOhms - 30 V, 30 V 5.5 V 61 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO247 300V 150A N-CH X3CLASS
89Förväntad 2026-04-03
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 150 A 8.3 mOhms - 20 V, 20 V 2.5 V 254 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET:er 500V 22A
300Förväntad 2026-04-10
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 22 A 270 mOhms - 30 V, 30 V 5.5 V 55 nC - 55 C + 150 C 350 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO247 500V 14A N-CH POLAR3
28Förväntad 2026-11-10
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 14 A 295 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube

IXYS MOSFET:er 360Amps 55V
196Förväntad 2026-08-19
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 55 V 360 A 2.4 mOhms - 20 V, 20 V 2 V 330 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube
IXYS MOSFET:er 100 Amps 40V
300Förväntad 2026-02-16
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 100 A 7 mOhms - 20 V, 20 V 2 V 25.5 nC - 55 C + 175 C 150 W Enhancement HiPerFET Tube
IXYS MOSFET:er 300 Amps 40V
300Förväntad 2026-03-27
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 300 A 2.5 mOhms - 20 V, 20 V 4 V 145 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er TrenchT2 HiperFETs Power MOSFET 350Tillgänglig mängd i lager
Min.: 300
Multipla: 50

Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFET:er TO247 300V 120A N-CH X3CLASS 2 940Tillgänglig mängd i lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 120 A 11 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFET:er DiscMSFT NChUltrJnctn X3Class TO-247AD 840Tillgänglig mängd i lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 150 A 9 mOhms - 20 V, 20 V 2.5 V 150 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube

IXYS MOSFET:er 15 Amps 1000V 0.76 Rds 330Tillgänglig mängd i lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 760 mOhms - 30 V, 30 V 6.5 V 97 nC - 55 C + 150 C 543 W Enhancement HiPerFET Tube

IXYS MOSFET:er 230Amps 100V 720Tillgänglig mängd i lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 100 V 230 A 4.7 mOhms HiPerFET Tube

IXYS MOSFET:er 850V Ultra Junction X-Class Pwr MOSFET 420Tillgänglig mängd i lager
Min.: 300
Multipla: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 40 A 145 mOhms - 30 V, 30 V 3.5 V 98 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube

IXYS MOSFET:er 96 Amps 150V 0.024 Rds 810Tillgänglig mängd i lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 96 A 24 mOhms - 20 V, 20 V - 55 C + 175 C 480 W Enhancement HiPerFET Tube