Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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85På lager
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Papprulle: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
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73På lager
1 200Förväntad 2026-03-16
Min.: 1
Multipla: 1
Papprulle: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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594På lager
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SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
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510På lager
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SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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1 597På lager
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SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
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593På lager
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SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
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90På lager
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
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600Förväntad 2026-07-27
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
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1 200På beställningen
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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400På beställningen
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SiC MOSFETS


STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
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996Förväntad 2026-04-22
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
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1 113Förväntad 2026-03-10
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Min.: 1
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Papprulle: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
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844Förväntad 2026-10-26
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SiC MOSFETS SiC Through Hole N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
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100På beställningen
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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Ledtid för icke lagerfört 16 Veckor
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
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Ledtid för icke lagerfört 16 Veckor
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SiC MOSFETS
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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Ledtid för icke lagerfört 17 Veckor
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
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Ledtid för icke lagerfört 17 Veckor
Min.: 1
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SiC MOSFETS
STMicroelectronics SiC-MOSFET:ar Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
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Ledtid för icke lagerfört 32 Veckor
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SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics SCT055H65G3AG
STMicroelectronics SiC-MOSFET:ar Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
Datablad
Ledtid för icke lagerfört 16 Veckor
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Multipla: 1 000
Papprulle: 1 000

SiC MOSFETS