Resultat: 38
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn Förpackning
Infineon Technologies MOSFET:er N-Ch 600V 10.6A DPAK-2 7 306På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10.6 A 380 mOhms - 20 V, 20 V 3.5 V 19 nC - 55 C + 150 C 31 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET:er HIGH POWER_LEGACY 844På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER PRICE/PERFORM 1 510På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 19.2 A 189 mOhms - 20 V, 20 V 3.5 V 37 nC - 40 C + 150 C 151 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 1 307På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_PRC/PRFRM 595På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.2 A 171 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 3 881På lager
Min.: 1
Multipla: 1
: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22.4 A 162 mOhms - 20 V, 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er HIGH POWER_LEGACY 401På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_PRC/PRFRM 590På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 Ohms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_PRC/PRFRM 770På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_PRC/PRFRM 430På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 540 mOhms - 20 V, 20 V 3.5 V 12 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er LOW POWER_LEGACY 1 986På lager
Min.: 1
Multipla: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 4 V 12 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 500På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 852På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_PRICE/PERFORM 4 037På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 23.8 A 160 mOhms - 20 V, 20 V 4 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 881På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 10.4A TO220FP-3 30På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 10.4A TO220FP-3 8På lager
1 000Förväntad 2026-09-10
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 214På lager
500Förväntad 2026-05-28
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 31På lager
480Förväntad 2026-07-02
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms - 20 V, 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 90På lager
480Förväntad 2026-07-02
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 77.5 A 37 mOhms - 20 V, 20 V 3.5 V 170 nC - 55 C + 150 C 481 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 115På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_LEGACY 343På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER PRICE/PERFORM 383På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 8.6A TO220FP-3 534På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16.8 A 538 mOhms - 20 V, 20 V 4 V 31 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 600V 7.7A TO220FP-3 49På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms - 20 V, 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube