Resultat: 51
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Teknologi Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Kvalificering Handelsnamn Förpackning
Infineon Technologies MOSFET:er 30V 1 N-CH HEXFET 5.8mOhms 15nC 31 155På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 30 V 86 A 8 mOhms - 20 V, 20 V 2.35 V 15 nC - 55 C + 175 C 75 W Enhancement HEXFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er 30V SINGLE N-CH 4.1mOhms 14nC 3 335På lager
Min.: 1
Multipla: 1
: 4 000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 90 A 6.3 mOhms - 20 V, 20 V 1.8 V 31 nC - 55 C + 150 C 54 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er SMALL SIGNAL MOSFETS 4 852På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT SOT-223-4 N-Channel 1 Channel 600 V 120 mA 30 Ohms - 20 V, 20 V 2.1 V 3.7 nC - 55 C + 150 C 1.8 W Depletion Reel, Cut Tape
Infineon Technologies MOSFET:er IFX FET >80 - 100V 1 856På lager
Min.: 1
Multipla: 1
Si Through Hole N-Channel 1 Channel 100 V 77 A 8.2 mOhms - 20 V, 20 V 3.8 V 28 nC - 55 C + 175 C 100 W Enhancement Tube
Infineon Technologies MOSFET:er 30V 1 N-CH HEXFET 3.1mOhms 41nC 4 240På lager
Min.: 1
Multipla: 1
: 4 000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 120 A 4.6 mOhms - 20 V, 20 V 1.8 V 41 nC - 55 C + 150 C 3.6 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er Addresses a broad range of applications from low- to high-switching frequency 4 955På lager
Min.: 1
Multipla: 1
: 5 000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 128 A 2.8 mOhms - 20 V, 20 V 2.35 V 27 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET:er IFX FET >80 - 100V 1 248På lager
1 800Förväntad 2026-06-30
Min.: 1
Multipla: 1
: 1 800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 315 A 1.5 mOhms - 20 V, 20 V 2.2 V 161 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET:er IFX FET 40V 3 496På lager
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 201 A 1.15 mOhms - 20 V, 20 V 3.4 V 210 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFET:er IFX FET > 60-80V 1 856På lager
Min.: 1
Multipla: 1
: 1 800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 351 A 1.23 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er Addresses a broad range of applications from low- to high-switching frequency 974På lager
6 000På beställningen
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 143 A 2.05 mOhms - 20 V, 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFET:er IFX FET 40V 1 111På lager
Min.: 1
Multipla: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 302 A 900 uOhms - 20 V, 20 V 2.1 V 210 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er IFX FET 60V 1 930På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 139 A 2.85 mOhms - 20 V, 20 V 2.1 V 68 nC - 55 C + 175 C 150 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er IFX FET > 60-80V 1 154På lager
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 191 A 1.9 mOhms - 20 V, 20 V 3.8 V 124 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET:er MOSFT 30V 190A 1.95mOhm 57nC Qg 1 898På lager
4 000Förväntad 2026-07-02
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 260 A 1.95 mOhms - 20 V, 20 V 1.9 V 86 nC - 55 C + 175 C 230 W Enhancement HEXFET Tube
Infineon Technologies MOSFET:er MOSFT 30V 78A 3.2mOhm 36nC Qg 5 492På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 78 A 4.2 mOhms - 20 V, 20 V 1.8 V 54 nC - 55 C + 175 C 140 W Enhancement HEXFET Tube
Infineon Technologies MOSFET:er IFX FET > 60-80V 1 231På lager
Min.: 1
Multipla: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 129 A 4 mOhms - 20 V, 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET:er IFX FET 60V 223På lager
Min.: 1
Multipla: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 293 A 1.05 mOhms - 20 V, 20 V 2.1 V 203 nC - 55 C + 175 C 300 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er IFX FET >80 - 100V 415På lager
800Förväntad 2026-09-10
Min.: 1
Multipla: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 117 A 5.05 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er SMALL SIGNAL MOSFETS 1 613På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 3.9 A 67 mOhms - 20 V, 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET:er SMALL SIGNAL MOSFETS 1 177På lager
Min.: 1
Multipla: 1
: 1 000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 6.4 A 67 mOhms - 20 V, 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET:er IFX FET 60V 87På lager
1 000Förväntad 2026-06-05
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 198 A 1.4 mOhms - 20 V, 20 V 2.1 V 203 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET:er IFX FET > 60-80V 2 666På lager
1 600Förväntad 2026-06-11
Min.: 1
Multipla: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 282 A 1.4 mOhms - 20 V, 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er IFX FET >80 - 100V 1 638På lager
Min.: 1
Multipla: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 184 A 2.6 mOhms - 20 V, 20 V 3.8 V 103 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFET:er IFX FET > 60-80V 2 990På lager
Min.: 1
Multipla: 1
Si Through Hole N-Channel 1 Channel 80 V 99 A 5.5 mOhms - 20 V, 20 V 3.8 V 36 nC - 55 C + 175 C 107 W Enhancement Tube
Infineon Technologies MOSFET:er IFX FET 15V-30V 7 006På lager
Min.: 1
Multipla: 1
: 5 000
Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 30 V 100 A 1.9 mOhms - 20 V, 20 V 1.2 V 22 nC - 55 C + 150 C 69 W Enhancement OptiMOS ~ StrongIRFET Reel, Cut Tape