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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
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Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
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Infineon Technologies MOSFET:er N-Ch 650V 46A TO220-3 CoolMOS C7
Datablad
774På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
1 409På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET:er N-Ch 650V 75A TO247-3 CoolMOS C7
Datablad
815På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 19 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 700V 46A TO247-4
Datablad
636På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWERNEW
Datablad
901På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er N-Ch 650V 10A ThinPAK-4 CoolMOS C7
Datablad
6 349På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 10 A 230 mOhms - 20 V, 20 V 4 V 20 nC - 40 C + 150 C 67 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
490På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
Datablad
244På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
1 244På lager
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 190 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET:er N-Ch 700V 75A TO247-4
Datablad
93På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
221På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
1 449På lager
2 000Förväntad 2026-03-02
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
706På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 4 V 64 nC - 55 C + 150 C 171 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
1 290På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 13 A 404 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er N-Ch 650V 11A DPAK-2 CoolMOS C7
Datablad
2 739På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 11 A 225 mOhms - 20 V, 20 V 4 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
Datablad
242På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
224På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
43På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13 A 168 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
Datablad
185På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
Datablad
73På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10 A 125 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER BEST IN CLASS
Datablad
377På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 168 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
143På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET:er N-Ch 650V 46A TO247-3 CoolMOS C7
Datablad
206På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3.5 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er HIGH POWER_NEW
Datablad
Ledtid för icke lagerfört 8 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 111 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 150 C 101 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET:er 650V CoolMOS C7 Power Trans; 225mOhm
Datablad
Ledtid för icke lagerfört 15 Veckor
Min.: 500
Multipla: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11 A 199 mOhms - 20 V, 20 V 3 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube