STPSC20G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC20G12 Silicon Carbide Power Schottky Diodes are available in a DO-247 package with long leads. The STMicroelectronics STPSC20G12 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Konfiguration
If - Framström
Vrrm - Repetativ backspänning
Vf - Framspänning
Ifsm - Stötström framåt
Ir - Motström
Minsta drifttemperatur
Maximal drifttemperatur
Kvalificering
Förpackning
STMicroelectronics SiC-schottkydioder Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datablad
114På lager
600Förväntad 2026-03-16
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 600

SMD/SMT HU3PAK-9 Single 20 A 1.2 kV 1.35 V 1.1 kA 10 uA - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics SiC-schottkydioder 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
Datablad
878På lager
Min.: 1
Multipla: 1

Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C Tube
STMicroelectronics SiC-schottkydioder Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datablad
49På lager
Min.: 1
Multipla: 1

Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C AEC-Q101 Tube