UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
onsemi SiC-MOSFET:ar 750V/9MOSICFETG4TO263-7
Datablad
688På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/18MOSICFETG4TO263-7
Datablad
1 247På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/23MOSICFETG4TO263-7
Datablad
812På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 64 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/33MOSICFETG4TO263-7
Datablad
490På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/18MOSICFETG4TO247-4
Datablad
650På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/23MOSICFETG4TO247-3
Datablad
593På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/44MOSICFETG4TO263-7
Datablad
764På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/44MOSICFETG4TO247-3
Datablad
558På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/60MOSICFETG4TO247-3
Datablad
2 130På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/23MOSICFETG4TO247-4
Datablad
843På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/33MOSICFETG4TO247-4
Datablad
1 026På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/33MOSICFETG4TO247-3
Datablad
472På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/5MOSICFETG4TOLL
Datablad
1 448På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 120 A 5 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 1.153 kW Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/8MOSICFETG4TOLL
Datablad
1 424På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 106 A 8 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 600 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/18MOSICFETG4TOLL
Datablad
1 725På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 53 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 349 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/33MOSICFETG4TOLL
Datablad
2 815På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 44 A 33 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 205 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/44MOSICFETG4TOLL
Datablad
2 844På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 35.6 A 44 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/60MOSICFETG4TOLL
Datablad
3 950På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 27.8 A 58 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/60MOSICFETG4TO263-7
Datablad
904På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/11MOSICFETG4TO263-7
Datablad
347På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7L N-Channel 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/23MOSICFETG4TOLL
Datablad
1 271På lager
Min.: 1
Multipla: 1
Papprulle: 2 000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 64 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/18MOSICFETG4TO247-3
Datablad
224På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/44MOSICFETG4TO247-4
Datablad
1 527På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/11MOSICFETG4TO247-4
Datablad
688På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/6MOSICFETG4TO247-4
Datablad
5På lager
600Förväntad 2026-08-07
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET