High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Kvalificering
Handelsnamn
onsemi SiC-MOSFET:ar 750V/9MOSICFETG4TO263-7
Datablad
688På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/18MOSICFETG4TO263-7
Datablad
1 247På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/23MOSICFETG4TO263-7
Datablad
812På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 64 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/33MOSICFETG4TO263-7
Datablad
490På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 650V/40MOSICFETG3TO247-3
Datablad
1 295På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/40MOSICFETG3TO247-4
Datablad
3 300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 1200V/80MOSICFETG3TO263-7
Datablad
781På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 750V/18MOSICFETG4TO247-4
Datablad
650På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/23MOSICFETG4TO247-3
Datablad
595På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/44MOSICFETG4TO263-7
Datablad
764På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 650V/30MOSICFETG3TO220-3
Datablad
932På lager
Min.: 1
Multipla: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/23MOSICFETG4TO247-4
Datablad
843På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/80MOSICFETG3TO263-7
Datablad
210På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi SiC-MOSFET:ar 650V/30MOSICFETG3TO247-3
Datablad
625På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/44MOSICFETG4TO247-3
Datablad
558På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/60MOSICFETG4TO247-3
Datablad
2 130På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/33MOSICFETG4TO247-4
Datablad
1 026På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 750V/33MOSICFETG4TO247-3
Datablad
472På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/80MOSICFETG3TO247-4
Datablad
599På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/80MOSICFETG3TO263-3
Datablad
1 262På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/30MOSICFETG3TO263-3
Datablad
460På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/80MOSICFETG3TO263-3
Datablad
463På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/30MOSICFETG3TO247-3
Datablad
130På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 1200V/40MOSICFETG3TO247-4
Datablad
686På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC-MOSFET:ar 650V/40MOSICFETG3TO263-7
Datablad
748På lager
Min.: 1
Multipla: 1
Papprulle: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 43 A 42 mOhms - 25 V, + 25 V 6 V 43 nC - 55 C + 175 C 195 W Enhancement SiC FET