650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

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Antal RoHS ECAD-modell Teknologi
Paket/låda
Monteringsstil
Konfiguration
Kollektor- Emitterspänning VCEO Max.
Kollektor - Sändarens mättnadsspänning
Maximal grind-emitterspänning
Kontinuerlig kollektorström vid 25 C
Pd - Effektavledning
Minsta drifttemperatur
Maximal drifttemperatur
Serie
Förpackning
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