MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

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Antal RoHS ECAD-modell Teknologi
Monteringsstil
Paket/låda
Transistorns polaritet
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Förpackning
STMicroelectronics MOSFET:er N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package
Datablad
83På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 130 mOhms - 25 V, 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 1.38 Ohm typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package
Datablad
1 411På lager
MouseReel tillgängligt
Min.: 1
Multipla: 1
Papprulle: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.38 Ohms - 30 V, 30 V 3 V 8.6 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET:er N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP packa
Datablad
309På lager
2 000Förväntad 2026-03-16
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 370 mOhms - 25 V, 25 V 3 V 16.5 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
Datablad
136På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 11 A 299 mOhms - 25 V, 25 V 4 V 120 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack
Datablad
836På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 310 mOhms - 25 V, 25 V 3 V 19 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP packa
Datablad
457På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 130 mOhms - 25 V, 25 V 3 V 34 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in a TO-220FP pack
Datablad
325På lager
1 000Förväntad 2026-02-12
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24 A 110 mOhms - 25 V, 25 V 3 V 43 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET:er in TO-220FP packa
Datablad
562På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 28 A 110 mOhms - 25 V, 25 V 3 V 54 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
Datablad
721På lager
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 10 A 370 mOhms - 25 V, 25 V 5 V 16.5 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
Datablad
10På lager
1 000Förväntad 2026-04-13
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
Datablad
485På lager
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 200 mOhms - 25 V, 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Tube

STMicroelectronics MOSFET:er N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
Datablad
299På lager
600Förväntad 2026-05-18
Min.: 1
Multipla: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 130 mOhms - 25 V, 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP packag
Datablad
2 000Förväntad 2026-03-23
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms - 25 V, 25 V 3 V 15 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET:er N-channel 600 V, 125 mOhm typ., 21 A MDmesh DM6 Power MOSFET in PowerFLAT 8x8 HV
Datablad
Ledtid för icke lagerfört 14 Veckor
Min.: 3 000
Multipla: 3 000
Papprulle: 3 000

Si SMD/SMT N-Channel 1 Channel 600 V 21 A 140 mOhms - 25 V, 25 V 3.25 V 35 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel
STMicroelectronics MOSFET:er N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET:er in TO-220 package
Datablad
Ledtid 16 Veckor
Min.: 1
Multipla: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 28 A 110 mOhms - 25 V, 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube

STMicroelectronics MOSFET:er N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package
Datablad
Ledtid för icke lagerfört 16 Veckor
Min.: 600
Multipla: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 130 mOhms - 25 V, 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube