CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Resultat: 30
Välj Bild Artikelnummer Tillverk: Beskrivning Datablad Tillgänglighet Prissättning: (SEK) Filtrera resultaten i tabellen efter enhetspris baserat på din kvantitet. Antal RoHS ECAD-modell Monteringsstil Paket/låda Transistorns polaritet Antal kanaler Vds - Dräneringskällans genombrottsspänning Id - Kontinuerlig dräneringsström Rds på - Dräneringskällans resistans Vgs - Gate-källans spänning Vgs th - Gate-källans tröskelspänning Qg - Gate-laddning Minsta drifttemperatur Maximal drifttemperatur Pd - Effektavledning Kanalläge Handelsnamn
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 651På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 1 148På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 345På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 444På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 1 121På lager
4 000Förväntad 2026-05-21
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 1 827På lager
1 250Förväntad 2026-03-19
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 179På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 594På lager
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 830På lager
1 000Förväntad 2026-02-26
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 176På lager
240Förväntad 2026-02-26
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 1 180På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 1 004På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 840På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 222På lager
720Förväntad 2026-07-30
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 332På lager
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 153På lager
240Förväntad 2026-02-23
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 57På lager
1 000Förväntad 2026-02-16
Min.: 1
Multipla: 1
Papprulle: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 255På lager
240Förväntad 2026-08-13
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 422På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 68På lager
240Förväntad 2026-02-16
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 300På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET 251På lager
Min.: 1
Multipla: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 173På lager
960Förväntad 2026-05-07
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 159På lager
240Förväntad 2026-02-12
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 80På lager
480Förväntad 2026-08-05
Min.: 1
Multipla: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC