CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

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Antal RoHS ECAD-modell Monteringsstil
Paket/låda
Antal kanaler
Vds - Dräneringskällans genombrottsspänning
Id - Kontinuerlig dräneringsström
Rds på - Dräneringskällans resistans
Vgs - Gate-källans spänning
Vgs th - Gate-källans tröskelspänning
Qg - Gate-laddning
Minsta drifttemperatur
Maximal drifttemperatur
Pd - Effektavledning
Kanalläge
Handelsnamn
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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303På lager
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SMD/SMT TO-263-7 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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965På lager
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Through Hole TO-247-4 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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849På lager
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: 1 000

SMD/SMT TO-263-7 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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617På lager
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: 1 000

SMD/SMT TO-263-7 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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368På lager
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Through Hole TO-247-4 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET
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240På lager
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Through Hole TO-247-4 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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8 281På lager
3 000Förväntad 2027-03-04
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: 1 000

SMD/SMT TO-263-7 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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3 844På lager
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SMD/SMT TO-263-7 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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4 390På lager
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Through Hole TO-247-3 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET
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1 751På lager
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Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET
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364På lager
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Through Hole TO-247-3 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET
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1 467På lager
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Through Hole TO-247-4 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET
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313På lager
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Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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1 509På lager
1 000Förväntad 2026-09-28
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: 1 000

SMD/SMT TO-263-7 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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2 502På lager
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: 1 000

SMD/SMT TO-263-7 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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950På lager
1 000Förväntad 2026-10-05
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Max.: 500
: 1 000

SMD/SMT TO-263-7 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datablad
376På lager
720Förväntad 2026-10-05
Min.: 1
Multipla: 1

Through Hole TO-247-3 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET
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314På lager
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Through Hole TO-247-3 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar SILICON CARBIDE MOSFET
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473På lager
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Through Hole TO-247-3 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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594På lager
2 160På beställningen
Min.: 1
Multipla: 1

Through Hole TO-247-4 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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69På lager
25 000På beställningen
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: 1 000

SMD/SMT TO-263-7 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Datablad
57På lager
2 000På beställningen
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: 1 000

SMD/SMT TO-263-7 1 Channel 1.7 kV 7.4 A 650 mOhms - 10 V, + 20 V 4.5 V 8 nC - 55 C + 175 C 88 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datablad
480Förväntad 2026-10-08
Min.: 1
Multipla: 1

Through Hole TO-247-3 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datablad
142På lager
240Förväntad 2026-10-29
Min.: 1
Multipla: 1

Through Hole TO-247-3 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC-MOSFET:ar CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datablad
472På lager
240Förväntad 2027-04-08
Min.: 1
Multipla: 1

Through Hole TO-247-3 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC